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Edgar Lodermeier, Dipl.-Phys.

Fakultät Elektrotechnik und Medientechnik

Mitarbeiter:innen

Laboringenieur

E 113

0991/3615-521

Sortierung:
Vortrag

  • S. Rogowsky
  • R. Ostendorf
  • G. Kaufel
  • W. Pletschen
  • J. Wagner
  • S. Liebich
  • M. Zimprich
  • K. Volz
  • W. Stolz
  • B. Kunert
  • Edgar Lodermeier
  • Heiko Ranzinger
  • Günther Benstetter

Characteristics of diode laser structures on silicon substrates based on the Ga(NAsP)/(BGa)(AsP) materials combination

In: Photonics West

San Francisco, CA, USA

  • Januar 2012 (2012)
  • IQMA
  • Elektrotechnik und Medientechnik
Zeitschriftenartikel

  • M. Lanza
  • M. Porti
  • M. Nafría
  • X. Aymerich
  • Günther Benstetter
  • Edgar Lodermeier
  • Heiko Ranzinger
  • G. Jaschke
  • S. Teichert
  • L. Wilde
  • P. Michalowski

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline Al2O3-Based Devices Studied With AFM-Related Techniques

In: IEEE Transactions on Nanotechnology vol. 10 pg. 344-351.

  • (2011)

In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al2O3 stacks for flash memories on the annealing temperature (T-A). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on T-A. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks.
  • Elektrotechnik und Medientechnik
  • IQMA
Zeitschriftenartikel

  • M. Lanza
  • M. Porti
  • M. Nafría
  • X. Aymerich
  • Günther Benstetter
  • Edgar Lodermeier
  • Heiko Ranzinger
  • G. Jaschke
  • S. Teichert
  • L. Wilde
  • P. Michalowski

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

In: Microelectronic Engineering vol. 86 pg. 1921-1924.

  • (2009)

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.
  • Elektrotechnik und Medientechnik
  • IQMA
Vortrag

  • M. Lanza
  • M. Porti
  • M. Nafría
  • Günther Benstetter
  • Werner Frammelsberger
  • Heiko Ranzinger
  • Edgar Lodermeier
  • G. Jaschke

Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM

In: 18th European Symposium on Reliability of Electronic Devices, Failure Physics and Analysis (ESREF)

Arcachon, Frankreich

  • 2007 (2007)
  • IQMA
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
Zeitschriftenartikel

  • M. Lanza
  • M. Porti
  • M. Nafría
  • Günther Benstetter
  • Werner Frammelsberger
  • Heiko Ranzinger
  • Edgar Lodermeier
  • G. Jaschke

Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM

In: Microelectronics Reliability vol. 47 pg. 1424-1428.

  • (2007)

In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current–voltage (I–V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive.
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA
Zeitschriftenartikel

  • S. Gsell
  • M. Schreck
  • Günther Benstetter
  • Edgar Lodermeier
  • B. Stritzker

Combined AFM-SEM Study of the Diamond Nucleation Layer on Ir(001)

In: Diamond and Related Materials vol. 16 pg. 665-670.

  • (2007)

During bias enhanced nucleation (BEN) of diamond on iridium the nucleation centres are gathered in discrete islands — the so called “domains”. The topographic signature of these domains has been clarified in the present study by two different concepts. First scanning electron microscopy (SEM) and atomic force microscopy (AFM) were combined to take images with both techniques of a small identical area on a standard BEN sample. In spite of the 2–3 nm deep roughening of the iridium it turned clearly out that the surface shows a 1 nm deep depression within the domains compared with the surface of the surrounding layer. On a second sample which did not show the normal roughening the domains could be identified directly from AFM images. The topographic signature of the domains was the same. Conductive AFM measurements showed that inside and outside the domains the carbon nucleation layer behaves like a high resistivity dielectric sustaining fields up to 107 V/cm. Finally, the temporal development of the domain patterns was studied by consecutive biasing steps on one sample. Depending on the local ion bombardment conditions we observed lateral growth or shrinkage on the same sample. This result suggests that domain formation is a continuous process during the whole BEN procedure starting from a local nucleation event and subsequent lateral expansion.
  • IQMA
  • Elektrotechnik und Medientechnik
Vortrag

  • Günther Benstetter
  • Werner Frammelsberger
  • Edgar Lodermeier
  • Heiko Ranzinger
  • D. Liu
  • Peter Breitschopf
  • W. Bergbauer
  • Alexander Hofer

Raster-Sonden-Mikroskopie (SPM) in der Fehler- und Zuverlässigkeitsanalytik

In: VDE Fehlermechanismen bei kleinen Geometrien

Grainau

  • 2006 (2006)
  • IQMA
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
Vortrag

  • Günther Benstetter
  • Peter Breitschopf
  • B. Knoll
  • Edgar Lodermeier
  • Alexander Hofer
  • Werner Frammelsberger

Intermittent Contact Scanning Capacitance Microscopy-First Results

In: Workshop on Scanning Probe Microscopy and Related Techniques

Infineon Technologies Villach, Österreich

  • 10.11.2005 (2005)
  • IQMA
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
Zeitschriftenartikel

  • D. Liu
  • Günther Benstetter
  • Edgar Lodermeier
  • J. Zhang
  • Y. Liu
  • J. Vancea

Filtered pulsed carbon cathodic arc: plasma and amorphous carbon properties

In: Journal of Applied Physics vol. 95 pg. 7624-7631.

  • (2004)

DOI: 10.1063/1.1753081

The carbonplasma ion energies produced by the filtered pulsed cathodic arc discharge method were measured as a function of filter inductance. The energy determination is based on the electro-optical time-of-flight method. The average ion energies of the pulsed ion beams were found to depend upon the rise time and duration of pulsed arc currents, which suggests that a gain of ion kinetic energy mainly arises from the electric plasma field from the ambipolar expansion of both electrons and ions, and an electron drag force because of the high expansion velocity of the electrons. The tetrahedral amorphous carbon (ta-C) films with a sp3 fraction of ∼70% were deposited on silicon substrates at the average ion energies of >6 eV in the highly ionized plasmas. The ta-C films were found to be covered with a few graphitelike atomic layers. The surfaceproperties of ultrathin carbonfilms, such as nanoscale friction coefficients, surface layer thickness, and silicon contents were strongly dependent on the ion energies. The growth of amorphous carbonfilms was explained in terms of the thermal spike migration of surfacecarbon atoms. In terms of this model, the thermal spike provides the energy required to release surface atoms from their metastable positions and leads to the formation of the sp3 bonded carbon on a sp3 bonded matrix. The experimental results indicate that the low-energy (<3 eV)carbon ions have insufficient energies to cause the rearrangement reaction within the film and they form graphitelike structures at filmsurface.
  • IQMA
  • Elektrotechnik und Medientechnik
Vortrag

  • D. Liu
  • Günther Benstetter
  • Edgar Lodermeier

Surface properties and growth of diamond-like carbon films prepared using CVD and PVD methods

In: E-MRS 2004

Strasbourg, Frankreich

  • 24.-28.5.2004 (2004)
  • Elektrotechnik und Medientechnik
  • IQMA
Zeitschriftenartikel

  • D. Li
  • Günther Benstetter
  • Edgar Lodermeier
  • I. Akula
  • I. Dudarchyk
  • Y. Liu
  • T. Ma

SPM investigation of diamond-like carbon and carbon nitride films

In: Surface & Coatings Technology vol. 172 pg. 194-203.

  • (2003)

DOI: 10.1016/S0257-8972(03)00338-4

Scanning probe microscopy was used to evaluate and compare the surface roughness, mechanical and tribological properties of hydrogenated (a-C:H) and tetrahedral (ta-C) diamond-like carbon (DLC) and amorphous carbon nitride (a-C:N) films. Compared to the a-C:H and a-C:N films, the ta-C films exhibit the lowest surface roughness. The soft surface layers of DLC and a-C:N films were revealed by nanowear tests and their thickness varies over the range of 0.2 to 4.1 nm. The nanoscale friction coefficient measurements from lateral force microscopy shows that these films have obviously different friction coefficients. The lower friction coefficients of ta-C and a-C:N films can be attributed to the existence of soft graphite-like surface structure. We proposed the deposition processes of DLC and a-C:N films, where their surface roughness, structure and mechanical properties were associated with the vapor plasma particle energy distribution.
  • Elektrotechnik und Medientechnik
  • IQMA
Zeitschriftenartikel

  • D. Liu
  • Günther Benstetter
  • Edgar Lodermeier
  • X. Chen
  • J. Ding
  • Y. Liu
  • J. Zhang
  • T. Ma

Surface and structural properties of ultrathin diamond-like carbon coatings

In: Diamond and Related Materials vol. 12 pg. 1594-1600.

  • (2003)

DOI: 10.1016/S0925-9635(03)00248-6

Nanoscale wear resistance, friction, and electrical conduction tests using atomic force microscope (AFM) have been conducted on ultrathin diamond-like carbon (DLC) coatings, including tetrahedral amorphous carbon (ta-C) deposited using pulsed cathodic arc (PCA) and filtered-PCA, and hydrogenated amorphous carbon (a-C:H) deposited using electron cyclotron resonance—chemical vapor deposition (ECR-CVD). The low-resistant layers at the surfaces of these thin DLC coatings were revealed by AFM-based nanowear tests. Their thickness is mainly determined by the deposition methods and does not show an obvious variation with the coating thickness decreasing from tens of nm to a few nm. The ∼3 nm ta-C coatings from PCA and filtered-PCA deposition were found to have the stable bulk structure beneath the thin (0.3–0.95 nm) surface layers. The ∼3 nm a-C:H coating from ECR-CVD had the extremely low load-carrying capacity and exhibited the evidence of coating delamination, which can be related to the thicker (1.5±0.1 nm) soft surface layers of a-C:H coatings. The results from conducting-AFM measurements indicate that a-C:H coatings have H and sp3 C enrichment surface layers while the soft surface layers of ta-C coatings have graphite-like structure. The nanoscale friction coefficients of these thin ta-C and a-C:H coatings were compared by AFM-based lateral force microscope. The lower friction coefficient of ta-C coatings can be attributed to the existence of graphite-like surface structure.
  • IQMA
  • Elektrotechnik und Medientechnik
Zeitschriftenartikel

  • D. Liu
  • Günther Benstetter
  • Edgar Lodermeier

Surface roughness, mechanical and tribological properties of ultrathin tetrahedral amorphous carbon coatings from atomic force measurements

In: Thin Solid Films vol. 436 pg. 244-249.

  • (2003)

DOI: 10.1016/S0040-6090(03)00592-3

Atomic force microscope (AFM), lateral force microscope and AFM-based scratch and wear testing techniques were used to evaluate and compare the surface roughness, tribological and mechanical properties of thin (2.7–43 nm) tetrahedral amorphous carbon coatings prepared by pulsed cathodic arc discharge. It was found that surface roughness of ultrathin (2–8 nm) coatings was mainly determined by the roughness of the Si substrate and their average density strongly depended on their thickness. Poor friction, mechanical properties of thinner (2.7–15 nm) coatings can be associated with their low average density. The dense coatings (>15 nm) had lower friction coefficient, better scratch and wear resistance properties that were independent of their thickness. It appears that the over 15-nm coatings studied are feasible for some wear-resistant and tribological applications.
  • IQMA
  • Elektrotechnik und Medientechnik
Vortrag

  • D. Liu
  • Günther Benstetter
  • Edgar Lodermeier
  • J. Vancea

Influence of the incident angle of energetic carbon ions on the properties of tetrahedral amorphous carbon (ta-C) films

In: 16th International Symposium on Plasma Chemistry

Taormina, Italien

  • 22.-27.06.2003 (2003)
  • Elektrotechnik und Medientechnik
  • IQMA
Zeitschriftenartikel

  • D. Liu
  • Günther Benstetter
  • Edgar Lodermeier
  • J. Vancea

Influence of the incident angle of energetic carbon ions on the properties of tetrahedral amorphous carbon (ta-C) films

In: Journal of Vacuum Science & Technology A vol. 21 pg. 1655-1670.

  • (2003)

DOI: 10.1116/1.1597888

Tetrahedral amorphouscarbon (ta-C) films have been grown on Ar+-beam-cleaned silicon substrates by changing the incident angle of energetic carbon ions produced in the plasma of pulsed cathodic vacuum arc discharge. Their surface roughness, deposition rate, composition, and mechanical and frictional properties as a function of the incident angle of energetic carbon ions were reported. The substrate holder can be rotated, and so an angle of deposition was defined as the angle of ion flux with respect to the substrate surface. While the deposition angle is varied from 20° to 59°, the root-mean-square (rms) roughness decreases from 0.5 to 0.1 nm, then it turns to increase at a slow rate when the deposition angle is over 77°. The variation correlates well with the one of hardness with the deposition angle and the films with lower rms roughness exhibit the higher hardness. The soft graphite-like surface layers existing at the surfaces of these films were revealed by atomic force microscopy-based nanowear tests and their thickness increases from 0.35 to 2.9 nm with the deposition angle decreasing from 90° to 30°. The soft surface layer thickness can have a great effect on the sp3 contents measured by x-ray photoelectron spectra. Nanoscale friction coefficient measurements were performed from lateral force microscopy by using a V-shaped Si3N4 cantilever. The low friction coefficients (0.076–0.093) of ta-C films can be attributed to their graphite-like surface structure. The implications of these results on the mechanisms proposed for the film formation were discussed.
  • Elektrotechnik und Medientechnik
  • IQMA
Vortrag

  • D. Liu
  • Günther Benstetter
  • Edgar Lodermeier

Comparison of Nanoscale Scratch and Wear Resistance of a-C:H, a-C:N and ta-C Fillms

In: International Conference on Plasma Surface Engineering (PSE2002)

Garmisch-Partenkirchen

  • 9.-13.9.2002 (2002)
  • IQMA
  • Elektrotechnik und Medientechnik