Laboringenieur
Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling
In: Microelectronics Reliability vol. 48 (8-9) pg. 1339-1349.
Raster-Sonden-Mikroskopie (SPM) in der Fehler- und Zuverlässigkeitsanalytik
In: VDE Fehlermechanismen bei kleinen Geometrien
Grainau
Intermittent contact scanning capacitance microscopy – An improved method for 2D doping profiling
In: Nanotech Northern Europe
Helsinki, Finnland
Intermittent Contact Scanning Capacitance Microscopy-First Results
In: Workshop on Scanning Probe Microscopy and Related Techniques
Infineon Technologies Villach, Österreich
Intermittent contact scanning capacitance microscopy-A novel method for 2D doping profiling
In: Microelectronics Reliability vol. 45 pg. 1568-1571.
Intermittent contact scanning capacitance microscopy-A novel method for 2D doping profiling
In: 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Arcachon, Frankreich
AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis
In: Microelectronics Reliability vol. 44 pg. 1615-1619.
DOI: 10.1016/j.microrel.2004.07.079
New Trends in the application of scanning probe techniques in failure analysis
In: 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Zürich, Schweiz
Failure analysis of deep sub-micron semiconductor structures and thin films with atomic force microscopy methods
In: First International conference on Engineering Failure Analysis (ICEFA)
Lissabon, Portugal
AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis
In: 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Zürich, Schweiz
New Trends in the application of scanning probe techniques in failure analysis
In: Microelectronics Reliability vol. 44 pg. 1541-1546.
DOI: 10.1016/j.microrel.2004.07.037
Atomic Force Microscopy Studies of Thin and Ultra-thin SiO2 Films . Final Report
In: 2nd VDE World Microtechnologies Congress
München