Grundlagen der Elektrotechnik, Materialwissenschaften, Werkstoffe, Integrierte Schaltungen, Halbleiter, Oberflächen-und Dünnschichtanalyse, Energiewirtschaft und Elektrische Energieversorgung
Professor
On the Limits of Scanning Thermal Microscopy of Ultrathin Films
In: Materials vol. 13 pg. 518.
DOI: 10.3390/ma13030518
Dielectric Properties of Ultrathin CaF2 Ionic Crystals
In: Advanced Materials vol. 32 pg. e2002525 (1-6).
Temperature dependent investigation of hexagonal boron nitride films using scanning thermal microscopy . Poster presentation
In: 6th Nano Today Conference 2019
Elsevier Lisbon, Portugal
Understanding Current Instabilities in Conductive Atomic Force Microscopy
In: Materials vol. 12 pg. E459.
DOI: 10.3390/ma12030459
Protective nanometer films for reliable Cu-Cu connections . Invited Talk
In: IEEE International Reliability Physics Symposium (IRPS)
San Francisco, CA, USA
Evaluation of Topography effects of SThM Measurements on Thin Thermoelectric Films . Poster
In: 4th Ed. Smart Materials and Surfaces - SMS Conference 2018
Venedig, Italien
Numerical Study of Hydrodynamic Forces for AFM Operations in Liquid Scanning (Article ID 6286595, 12 pages)
In: Scanning pg. 1-12.
DOI: 10.1155/2017/6286595
Chapter 3: Fundamentals of CAFM Operation Modes
pg. 45-78.
Weinheim
Protective nanometer films for reliable Cu-Cu connections
In: Microelectronics Reliability vol. 76-77 pg. 383-389.
DOI: 10.1016/j.microrel.2017.07.001
Protective nanometer films for reliable Cu-Cu connections . Best Paper Award
Characterization of the photocurrents generated by the laser of atomic force microscopes
In: Review of Scientific Instruments vol. 87 pg. 083703.
DOI: 10.1063/1.4960597
Nanoscale characterization of CH3-terminated Self-Assembled Monolayer on copper by advanced scanning probe microscopy techniques
In: Applied Surface Science vol. 356 pg. 921-926.
DOI: 10.1016/j.apsusc.2015.08.182
Nanoscale characterization of copper oxide films by Kelvin Probe Force Microscopy
In: Thin Solid Films vol. 584 pg. 310-315.
DOI: 10.1016/j.tsf.2015.01.071
Characterization of Self-Assembled Monolayers on Copper by Scanning Probe Microscopy
In: 16th International Conference on Thin Films (ICTF16)
Dubrovnik, Kroatien
Nanoscale copper oxide characterization with Kelvin Probe Force Microscopy . Posterpräsentation
In: The 7th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2014)
Chongquing, China
Raster-Sonden-Mikroskopie . Analyseverfahren für die Halbleiterelektronik
In: Elektrotechnik und Elektronik in Bayern. Sonderteil Sensorik (Zukunftstechnologien in Bayern) pg. 10-16.
München
Atomic Force Microscopy - Characteristics and Advanced Applications
In: 2nd International Autumn School of Surface Engineering
University of West Bohemia Pilsen, Tschechische Republik
Analysis of copper oxide films by combined scanning microscopy
In: 6th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2012)
Singapur, Singapur
Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM
In: 18th European Symposium on Reliability of Electronic Devices, Failure Physics and Analysis (ESREF)
Arcachon, Frankreich
Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM
In: Microelectronics Reliability vol. 47 pg. 1424-1428.
C-AFM-based thickness determination of thin and ultra-thin SiO2 films by use of different conductive-coated probe tips
In: Applied Surface Science vol. 253 pg. 3615-3626.
Kelvin Probe Force Microscopy – An appropriate tool for the electrical characterisation of LED heterostructures
In: Nanotech Northern Europe
Helsinki, Finnland
Kelvin Probe Force Microscopy – An appropriate tool for the electrical characterisation of LED heterostructures
In: 17th European Symposium - Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2006
Wuppertal
Thickness determination of thin and ultra-thin SiO2 films by C-AFM IV-spectroscopy
In: Applied Surface Science vol. 252 pg. 2375-2388.
Kelvin Probe Force Microscopy – An appropriate tool for the electrical characterisation of LED heterostructures
In: Microelectronics Reliability vol. 46 pg. 1736-1740.
Raster-Sonden-Mikroskopie (SPM) in der Fehler- und Zuverlässigkeitsanalytik
In: VDE Fehlermechanismen bei kleinen Geometrien
Grainau
Intermittent contact scanning capacitance microscopy – An improved method for 2D doping profiling
In: Nanotech Northern Europe
Helsinki, Finnland
Nanoscale electron field emissions from the bare, hydrogenated and graphite-like layer covered tetrahedral amorphous carbon films
In: Journal of Applied Physics vol. 99 pg. 044303-044303-8.
DOI: 10.1063/1.2171806
Advanced Atomic Force Microscopy Techniques for Nano-Scale Analysis
In: 1st Conference of Micro- and Nanotechnology
Wien, Österreich
Intermittent contact scanning capacitance microscopy-A novel method for 2D doping profiling
In: 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Arcachon, Frankreich
Intermittent Contact Scanning Capacitance Microscopy-First Results
In: Workshop on Scanning Probe Microscopy and Related Techniques
Infineon Technologies Villach, Österreich
Intermittent contact scanning capacitance microscopy-A novel method for 2D doping profiling
In: Microelectronics Reliability vol. 45 pg. 1568-1571.
Failure analysis of deep sub-micron semiconductor structures and thin films with atomic force microscopy methods
In: First International conference on Engineering Failure Analysis (ICEFA)
Lissabon, Portugal
Raster Sondenmikroskopie in der Mikro- und Nanoelektronik
pg. 12-16.
Raster Sondenmikroskopie in der Mikro- und Nanoelektronik
pg. 12-16.
Bayerisches Staatsministerium für Wirtschaft, Infrastruktur, Verkehr und Technologie
AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis
In: 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Zürich, Schweiz
New Trends in the application of scanning probe techniques in failure analysis
In: 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Zürich, Schweiz
Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for Conductive Atomic Force Microscopy investigations
In: Materials Science & Engineering B vol. 116 pg. 168-174.
DOI: 10.1016/j.mseb.2004.09.027
New Trends in the application of scanning probe techniques in failure analysis
In: Microelectronics Reliability vol. 44 pg. 1541-1546.
DOI: 10.1016/j.microrel.2004.07.037
AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis
In: Microelectronics Reliability vol. 44 pg. 1615-1619.
DOI: 10.1016/j.microrel.2004.07.079
Failure Analysis of Deep Sub-Micron Semiconductor Structures, Presentation held at: Dalian University of Technology
Chinese Academy of Science, Institute of Microelectronics Peking, China
Atomic Force Microscopy Studies of Thin and Ultra-Thin SiO2 Films and Interfaces
Dalian University of Technology, Key-Labs Dalian, China
Atomic Force Microscopy Studies of Thin and Ultra-Thin SiO2 Films and Interfaces
Chinese Academy of Science, Institute of Microelectronics Peking, China
Failure Analysis of Deep Sub-Micron Semiconductor Structures
Chinese Academy of Science, Institute of Microelectronics Peking, China
Characterization of thin and ultrathin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy
In: 14th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Arcachon, Frankreich
Characterization of thin and ultrathin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy
In: Microelectronics Reliability vol. 43 pg. 1465-1470.
DOI: 10.1016/S0026-2714(03)00260-9
Atomic Force Microscopy Studies of Thin and Ultra-thin SiO2 Films . Final Report
In: 2nd VDE World Microtechnologies Congress
München
Advanced Analysis of Thin and Ultrathin SiO2/Si Interfaces with Combined Atomic Force Microscopy Methods
In: 29th International Symposium for Testing and Failure Analysis pg. 406-412.
Santa Clara, CA, USA
Advanced Analysis of Thin and Ultrathin SiO2/Si Interfaces with Combined Atomic Force Microscopy Methods
In: 29th International Symposium for Testing and Failure Analysis pg. 406-412.
Santa Clara, CA, USA
UV unterstützter thermischer Oxidationsofen . Präsentation, Kategorie Patente
Würzburg
Reliability Analysis of Integrated Circuits in Deep Sub-Micron Technology
Chinese Academy of Science, Institute of Microelectronics Peking, China
The effect of the surface layer of tetrahedral amorphous carbon films on their tribological and electron emission properties investigated by atomic force microscopy
In: Applied Physics Letters vol. 82 pg. 3898-3900.
DOI: 10.1063/1.1581367
Verfahren der Rastersondenmikroskopie . Präsentation, Kategorie Patente
Würzburg
Conducting Atomic Force Microscopy Studies for Reliability Evaluation of Ultrathin SiO2 Films . Final Report
In: IEEE International Integrated Reliability Workshop
Lake Tahoe, CA, USA
Combined AFM Methods to Improve Reliability Investigations of Thin Oxides . Final Report
In: IEEE International Integrated Reliability Workshop
Lake Tahoe, CA, USA
Mikro- und Nanoanalytik, Oberflächen- und Dünnschichtanalytik, Raster-Sonden-Mikroskopie, Halbleiter Fehler- und Zuverlässigkeitsanalytik, Energiewirtschaft, Elektrische Energieversorgung
2018-2022: Studiendekan, Fakultät Maschinenbau und Mechatronik seit 2010: Professor an der Technischen Hochschule Deggendorf, Fakultät Maschinenbau und Mechatronik Technischer Asset Manager, E-ON Netz GmbH bzw. transpower stromübertragungs gmbh, Bayreuth Promotion: University of the West of England, Großbritannien Laboringenieur und Doktorand im Projekt Qualitätssicherung und Zuverlässigkeit von Halbleiterbauelementen, Hochschule Deggendorf Bereichsleiter Stromversorgung, Stadtwerke Deggendorf Studienabschluss: Dipl.-Ing. (FH), Fachhochschule Regensburg Berufsausbildung zum Energieanlagenelektroniker, Südzucker AG Plattling
Professor und Teamleiter im “Institut für Qualitäts- und Materialanalyse” der THD (Leitung: Prof. Dr.-Ing. Günther Benstetter)