Grundlagen der Elektrotechnik, Materialwissenschaften, Werkstoffe, Integrierte Schaltungen, Halbleiter, Oberflächen-und Dünnschichtanalyse, Energiewirtschaft und Elektrische Energieversorgung
Professor
Solid Platinum Nanoprobes for Highly Reliable Conductive Atomic Force Microscopy
In: ACS Applied Materials & Interfaces vol. 15 pg. 21602-21608.
Dielectric Properties of Ultrathin CaF2 Ionic Crystals
In: Advanced Materials vol. 32 pg. e2002525 (1-6).
On the Limits of Scanning Thermal Microscopy of Ultrathin Films
In: Materials vol. 13 pg. 518.
DOI: 10.3390/ma13030518
Understanding Current Instabilities in Conductive Atomic Force Microscopy
In: Materials vol. 12 pg. E459.
DOI: 10.3390/ma12030459
Temperature dependent investigation of hexagonal boron nitride films using scanning thermal microscopy . Poster presentation
In: 6th Nano Today Conference 2019
Nano Today Journal Lisbon, Portugal
Protective nanometer films for reliable Cu-Cu connections . Invited Talk
In: IEEE International Reliability Physics Symposium (IRPS)
San Francisco, CA, USA
Evaluation of Topography effects of SThM Measurements on Thin Thermoelectric Films . Poster
In: 4th Ed. Smart Materials and Surfaces - SMS Conference 2018
Venedig, Italien
Numerical Study of Hydrodynamic Forces for AFM Operations in Liquid Scanning (Article ID 6286595, 12 pages)
In: Scanning pg. 1-12.
DOI: 10.1155/2017/6286595
Protective nanometer films for reliable Cu-Cu connections
In: Microelectronics Reliability vol. 76-77 pg. 383-389.
DOI: 10.1016/j.microrel.2017.07.001
Chapter 3: Fundamentals of CAFM Operation Modes
pg. 45-78.
Weinheim
Protective nanometer films for reliable Cu-Cu connections . Best Paper Award
Characterization of the photocurrents generated by the laser of atomic force microscopes
In: Review of Scientific Instruments vol. 87 pg. 083703.
DOI: 10.1063/1.4960597
Nanoscale characterization of CH3-terminated Self-Assembled Monolayer on copper by advanced scanning probe microscopy techniques
In: Applied Surface Science vol. 356 pg. 921-926.
DOI: 10.1016/j.apsusc.2015.08.182
Nanoscale characterization of copper oxide films by Kelvin Probe Force Microscopy
In: Thin Solid Films vol. 584 pg. 310-315.
DOI: 10.1016/j.tsf.2015.01.071
Characterization of Self-Assembled Monolayers on Copper by Scanning Probe Microscopy
In: 16th International Conference on Thin Films (ICTF16)
Dubrovnik, Kroatien
Nanoscale copper oxide characterization with Kelvin Probe Force Microscopy . Posterpräsentation
In: The 7th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2014)
Chongquing, China
Atomic Force Microscopy - Characteristics and Advanced Applications
In: 2nd International Autumn School of Surface Engineering
University of West Bohemia Pilsen, Tschechische Republik
Raster-Sonden-Mikroskopie . Analyseverfahren für die Halbleiterelektronik
In: Elektrotechnik und Elektronik in Bayern. Sonderteil Sensorik (Zukunftstechnologien in Bayern) pg. 10-16.
München
Analysis of copper oxide films by combined scanning microscopy
In: 6th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2012)
Singapur, Singapur
Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM
In: 18th European Symposium on Reliability of Electronic Devices, Failure Physics and Analysis (ESREF)
Arcachon, Frankreich
C-AFM-based thickness determination of thin and ultra-thin SiO2 films by use of different conductive-coated probe tips
In: Applied Surface Science vol. 253 pg. 3615-3626.
Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM
In: Microelectronics Reliability vol. 47 pg. 1424-1428.
Kelvin Probe Force Microscopy – An appropriate tool for the electrical characterisation of LED heterostructures
In: Nanotech Northern Europe
Helsinki, Finnland
Raster-Sonden-Mikroskopie (SPM) in der Fehler- und Zuverlässigkeitsanalytik
In: VDE Fehlermechanismen bei kleinen Geometrien
Grainau
Nanoscale electron field emissions from the bare, hydrogenated and graphite-like layer covered tetrahedral amorphous carbon films
In: Journal of Applied Physics vol. 99 pg. 044303-044303-8.
DOI: 10.1063/1.2171806
Thickness determination of thin and ultra-thin SiO2 films by C-AFM IV-spectroscopy
In: Applied Surface Science vol. 252 pg. 2375-2388.
Kelvin Probe Force Microscopy – An appropriate tool for the electrical characterisation of LED heterostructures
In: Microelectronics Reliability vol. 46 pg. 1736-1740.
Intermittent contact scanning capacitance microscopy – An improved method for 2D doping profiling
In: Nanotech Northern Europe
Helsinki, Finnland
Kelvin Probe Force Microscopy – An appropriate tool for the electrical characterisation of LED heterostructures
In: 17th European Symposium - Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2006
Wuppertal
Intermittent contact scanning capacitance microscopy-A novel method for 2D doping profiling
In: 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Arcachon, Frankreich
Intermittent contact scanning capacitance microscopy-A novel method for 2D doping profiling
In: Microelectronics Reliability vol. 45 pg. 1568-1571.
Intermittent Contact Scanning Capacitance Microscopy-First Results
In: Workshop on Scanning Probe Microscopy and Related Techniques
Infineon Technologies Villach, Österreich
Advanced Atomic Force Microscopy Techniques for Nano-Scale Analysis
In: 1st Conference of Micro- and Nanotechnology
Wien, Österreich
Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for Conductive Atomic Force Microscopy investigations
In: Materials Science & Engineering B vol. 116 pg. 168-174.
DOI: 10.1016/j.mseb.2004.09.027
New Trends in the application of scanning probe techniques in failure analysis
In: Microelectronics Reliability vol. 44 pg. 1541-1546.
DOI: 10.1016/j.microrel.2004.07.037
Failure analysis of deep sub-micron semiconductor structures and thin films with atomic force microscopy methods
In: First International conference on Engineering Failure Analysis (ICEFA)
Lissabon, Portugal
AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis
In: 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Zürich, Schweiz
AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis
In: Microelectronics Reliability vol. 44 pg. 1615-1619.
DOI: 10.1016/j.microrel.2004.07.079
Raster Sondenmikroskopie in der Mikro- und Nanoelektronik
pg. 12-16.
Bayerisches Staatsministerium für Wirtschaft, Infrastruktur, Verkehr und Technologie
New Trends in the application of scanning probe techniques in failure analysis
In: 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Zürich, Schweiz
Raster Sondenmikroskopie in der Mikro- und Nanoelektronik
pg. 12-16.
Atomic Force Microscopy Studies of Thin and Ultra-Thin SiO2 Films and Interfaces
Dalian University of Technology, Key-Labs Dalian, China
Atomic Force Microscopy Studies of Thin and Ultra-Thin SiO2 Films and Interfaces
Chinese Academy of Science, Institute of Microelectronics Peking, China
Failure Analysis of Deep Sub-Micron Semiconductor Structures, Presentation held at: Dalian University of Technology
Chinese Academy of Science, Institute of Microelectronics Peking, China
Failure Analysis of Deep Sub-Micron Semiconductor Structures
Chinese Academy of Science, Institute of Microelectronics Peking, China
UV unterstützter thermischer Oxidationsofen . Präsentation, Kategorie Patente
Würzburg
Characterization of thin and ultrathin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy
In: Microelectronics Reliability vol. 43 pg. 1465-1470.
DOI: 10.1016/S0026-2714(03)00260-9
Advanced Analysis of Thin and Ultrathin SiO2/Si Interfaces with Combined Atomic Force Microscopy Methods
In: 29th International Symposium for Testing and Failure Analysis pg. 406-412.
Santa Clara, CA, USA
The effect of the surface layer of tetrahedral amorphous carbon films on their tribological and electron emission properties investigated by atomic force microscopy
In: Applied Physics Letters vol. 82 pg. 3898-3900.
DOI: 10.1063/1.1581367
Characterization of thin and ultrathin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy
In: 14th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Arcachon, Frankreich
Atomic Force Microscopy Studies of Thin and Ultra-thin SiO2 Films . Final Report
In: 2nd VDE World Microtechnologies Congress
München
Advanced Analysis of Thin and Ultrathin SiO2/Si Interfaces with Combined Atomic Force Microscopy Methods
In: 29th International Symposium for Testing and Failure Analysis pg. 406-412.
Santa Clara, CA, USA
Reliability Analysis of Integrated Circuits in Deep Sub-Micron Technology
Chinese Academy of Science, Institute of Microelectronics Peking, China
Verfahren der Rastersondenmikroskopie . Präsentation, Kategorie Patente
Würzburg
Conducting Atomic Force Microscopy Studies for Reliability Evaluation of Ultrathin SiO2 Films . Final Report
In: IEEE International Integrated Reliability Workshop
Lake Tahoe, CA, USA
Combined AFM Methods to Improve Reliability Investigations of Thin Oxides . Final Report
In: IEEE International Integrated Reliability Workshop
Lake Tahoe, CA, USA
Mikro- und Nanoanalytik, Oberflächen- und Dünnschichtanalytik, Raster-Sonden-Mikroskopie, Halbleiter Fehler- und Zuverlässigkeitsanalytik, Energiewirtschaft, Elektrische Energieversorgung
2018-2022: Studiendekan, Fakultät Maschinenbau und Mechatronik seit 2010: Professor an der Technischen Hochschule Deggendorf, Fakultät Maschinenbau und Mechatronik Technischer Asset Manager, E-ON Netz GmbH bzw. transpower stromübertragungs gmbh, Bayreuth Promotion: University of the West of England, Großbritannien Laboringenieur und Doktorand im Projekt Qualitätssicherung und Zuverlässigkeit von Halbleiterbauelementen, Hochschule Deggendorf Bereichsleiter Stromversorgung, Stadtwerke Deggendorf Studienabschluss: Dipl.-Ing. (FH), Fachhochschule Regensburg Berufsausbildung zum Energieanlagenelektroniker, Südzucker AG Plattling
Professor und Teamleiter im “Institut für Qualitäts- und Materialanalyse” der THD (Leitung: Prof. Dr.-Ing. Günther Benstetter)