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Prof. Dr. Werner Frammelsberger

Grundlagen der Elektrotechnik, Materialwissenschaften, Werkstoffe, Integrierte Schaltungen, Halbleiter, Oberflächen-und Dünnschichtanalyse, Energiewirtschaft und Elektrische Energieversorgung

Fakultät Maschinenbau und Mechatronik

Professor:innen

Professor

C 202

0991/3615-340

Sortierung:
Zeitschriftenartikel

  • Christoph Metzke
  • Werner Frammelsberger
  • Jonas Weber
  • Fabian Kühnel
  • K. Zhu
  • M. Lanza
  • Günther Benstetter

On the Limits of Scanning Thermal Microscopy of Ultrathin Films

In: Materials vol. 13 pg. 518.

  • (2020)

DOI: 10.3390/ma13030518

Heat transfer processes in micro- and nanoscale devices have become more and more important during the last decades. Scanning thermal microscopy (SThM) is an atomic force microscopy (AFM) based method for analyzing local thermal conductivities of layers with thicknesses in the range of several nm to µm. In this work, we investigate ultrathin films of hexagonal boron nitride (h-BN), copper iodide in zincblende structure (γ-CuI) and some test sample structures fabricated of silicon (Si) and silicon dioxide (SiO2) using SThM. Specifically, we analyze and discuss the influence of the sample topography, the touching angle between probe tip and sample, and the probe tip temperature on the acquired results. In essence, our findings indicate that SThM measurements include artefacts that are not associated with the thermal properties of the film under investigation. We discuss possible ways of influence, as well as the magnitudes involved. Furthermore, we suggest necessary measuring conditions that make qualitative SThM measurements of ultrathin films of h-BN with thicknesses at or below 23 nm possible.
  • IQMA
  • Elektrotechnik und Medientechnik
  • NACHHALTIG
Zeitschriftenartikel

  • C. Wen
  • A. Banshchikov
  • Y. Illarionov
  • Werner Frammelsberger
  • T. Knobloch
  • F. Hui
  • N. Sokolov
  • T. Grasser
  • M. Lanza

Dielectric Properties of Ultrathin CaF2 Ionic Crystals

In: Advanced Materials vol. 32 pg. e2002525 (1-6).

  • 14.07.2020 (2020)

DOI: 10.1002/adma.202002525

Mechanically exfoliated 2D hexagonal boron nitride (h-BN) is currently the preferred dielectric material to interact with graphene and 2D transition metal dichalcogenides in nanoelectronic devices, as they form a clean van der Waals interface. However, h-BN has a low dielectric constant (≈3.9), which in ultrascaled devices results in high leakage current and premature dielectric breakdown. Furthermore, the synthesis of h-BN using scalable methods, such as chemical vapor deposition, requires very high temperatures (>900 °C) , and the resulting h-BN stacks contain abundant few-atoms-wide amorphous regions that decrease its homogeneity and dielectric strength. Here it is shown that ultrathin calcium fluoride (CaF2 ) ionic crystals could be an excellent solution to mitigate these problems. By applying >3000 ramped voltage stresses and several current maps at different locations of the samples via conductive atomic force microscopy, it is statistically demonstrated that ultrathin CaF2 shows much better dielectric performance (i.e., homogeneity, leakage current, and dielectric strength) than SiO2 , TiO2 , and h-BN. The main reason behind this behavior is that the cubic crystalline structure of CaF2 is continuous and free of defects over large regions, which prevents the formation of electrically weak spots.
  • IQMA
  • NACHHALTIG
Vortrag

  • Christoph Metzke
  • Günther Benstetter
  • Werner Frammelsberger
  • Jonas Weber
  • Fabian Kühnel

Temperature dependent investigation of hexagonal boron nitride films using scanning thermal microscopy . Poster presentation

In: 6th Nano Today Conference 2019

Elsevier Lisbon, Portugal

  • 16.-20.06.2019 (2019)
  • IQMA
  • Elektrotechnik und Medientechnik
  • NACHHALTIG
Zeitschriftenartikel

  • L. Jiang
  • Jonas Weber
  • F. Puglisi
  • P. Pavan
  • L. Larcher
  • Werner Frammelsberger
  • Günther Benstetter
  • M. Lanza

Understanding Current Instabilities in Conductive Atomic Force Microscopy

In: Materials vol. 12 pg. E459.

  • (2019)

DOI: 10.3390/ma12030459

Conductive atomic force microscopy (CAFM) is one of the most powerful techniques in studying the electrical properties of various materials at the nanoscale. However, understanding current fluctuations within one study (due to degradation of the probe tips) and from one study to another (due to the use of probe tips with different characteristics), are still two major problems that may drive CAFM researchers to extract wrong conclusions. In this manuscript, these two issues are statistically analyzed by collecting experimental CAFM data and processing them using two different computational models. Our study indicates that: (i) before their complete degradation, CAFM tips show a stable state with degraded conductance, which is difficult to detect and it requires CAFM tip conductivity characterization before and after the CAFM experiments; and (ii) CAFM tips with low spring constants may unavoidably lead to the presence of a ~1.2 nm thick water film at the tip/sample junction, even if the maximum contact force allowed by the setup is applied. These two phenomena can easily drive CAFM users to overestimate the properties of the samples under test (e.g., oxide thickness). Our study can help researchers to better understand the current shifts that were observed during their CAFM experiments, as well as which probe tip to use and how it degrades. Ultimately, this work may contribute to enhancing the reliability of CAFM investigations.
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA
  • NACHHALTIG
Vortrag

  • Tobias Berthold
  • Günther Benstetter
  • Werner Frammelsberger
  • Manuel Bogner
  • R. Rodríguez
  • M. Nafría

Protective nanometer films for reliable Cu-Cu connections . Invited Talk

In: IEEE International Reliability Physics Symposium (IRPS)

San Francisco, CA, USA

  • 11.-15.03.2018 (2018)
  • Elektrotechnik und Medientechnik
  • IQMA
  • NACHHALTIG
Vortrag

  • Christoph Metzke
  • W. Lehermeier
  • Günther Benstetter
  • Werner Frammelsberger

Evaluation of Topography effects of SThM Measurements on Thin Thermoelectric Films . Poster

In: 4th Ed. Smart Materials and Surfaces - SMS Conference 2018

Venedig, Italien

  • 23.-25.10.2018 (2018)
  • Elektrotechnik und Medientechnik
  • IQMA
  • NACHHALTIG
Zeitschriftenartikel

  • Tobias Berthold
  • Günther Benstetter
  • Werner Frammelsberger
  • R. Rodríguez
  • M. Nafría

Numerical Study of Hydrodynamic Forces for AFM Operations in Liquid Scanning (Article ID 6286595, 12 pages)

In: Scanning pg. 1-12.

  • (2017)

DOI: 10.1155/2017/6286595

For advanced atomic force microscopy (AFM) investigation of chemical surface modifications or very soft organic sample surfaces, the AFM probe tip needs to be operated in a liquid environment because any attractive or repulsive forces influenced by the measurement environment could obscure molecular forces. Due to fluid properties, the mechanical behavior of the AFM cantilever is influenced by the hydrodynamic drag force due to viscous friction with the liquid. This study provides a numerical model based on computational fluid dynamics (CFD) and investigates the hydrodynamic drag forces for different cantilever geometries and varying fluid conditions for Peakforce Tapping (PFT) in liquids. The developed model was verified by comparing the predicted values with published results of other researchers and the findings confirmed that drag force dependence on tip speed is essentially linear in nature. We observed that triangular cantilever geometry provides significant lower drag forces than rectangular geometry and that short cantilever offers reduced flow resistance. The influence of different liquids such as ultrapure water or an ethanol-water mixture as well as a temperature induced variation of the drag force could be demonstrated. The acting forces are lowest in ultrapure water, whereas with increasing ethanol concentrations the drag forces increase.
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • IQMA
  • NACHHALTIG
Beitrag in Sammelwerk/Tagungsband

  • Günther Benstetter
  • Alexander Hofer
  • D. Liu
  • Werner Frammelsberger
  • M. Lanza

Chapter 3: Fundamentals of CAFM Operation Modes

pg. 45-78.

Weinheim

  • (2017)
  • IQMA
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • NACHHALTIG
Zeitschriftenartikel

  • Tobias Berthold
  • Günther Benstetter
  • Werner Frammelsberger
  • Manuel Bogner
  • R. Rodríguez
  • M. Nafría

Protective nanometer films for reliable Cu-Cu connections

In: Microelectronics Reliability vol. 76-77 pg. 383-389.

  • (2017)

DOI: 10.1016/j.microrel.2017.07.001

  • IQMA
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • NACHHALTIG
Beitrag in Sammelwerk/Tagungsband

  • Tobias Berthold
  • Günther Benstetter
  • Werner Frammelsberger
  • Manuel Bogner
  • R. Rodríguez
  • M. Nafría

Protective nanometer films for reliable Cu-Cu connections . Best Paper Award

  • (2017)
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • IQMA
  • NACHHALTIG
Zeitschriftenartikel

  • Y. Ji
  • H. Fei
  • Y. Shi
  • V. Iglesias
  • D. Lewis
  • N. Jiebin
  • S. Long
  • M. Liu
  • Alexander Hofer
  • Werner Frammelsberger
  • Günther Benstetter
  • A. Scheuermann
  • P. McIntyre
  • M. Lanza

Characterization of the photocurrents generated by the laser of atomic force microscopes

In: Review of Scientific Instruments vol. 87 pg. 083703.

  • (2016)

DOI: 10.1063/1.4960597

The conductive atomic force microscope (CAFM) has become an essential tool for the nanoscale electronic characterization of many materials and devices. When studying photoactive samples, the laser used by the CAFM to detect the deflection of the cantilever can generate photocurrents that perturb the current signals collected, leading to unreliable characterization. In metal-coated semiconductor samples, this problem is further aggravated, and large currents above the nanometer range can be observed even without the application of any bias. Here we present the first characterization of the photocurrents introduced by the laser of the CAFM, and we quantify the amount of light arriving to the surface of the sample. The mechanisms for current collection when placing the CAFM tip on metal-coated photoactive samples are also analyzed in-depth. Finally, we successfully avoided the laser-induced perturbations using a two pass technique: the first scan collects the topography (laser ON) and the second collects the current (laser OFF). We also demonstrate that CAFMs without a laser (using a tuning fork for detecting the deflection of the tip) do not have this problem.
  • Elektrotechnik und Medientechnik
  • IQMA
  • NACHHALTIG
Zeitschriftenartikel

  • Tobias Berthold
  • Günther Benstetter
  • Werner Frammelsberger
  • R. Rodríguez
  • M. Nafría

Nanoscale characterization of CH3-terminated Self-Assembled Monolayer on copper by advanced scanning probe microscopy techniques

In: Applied Surface Science vol. 356 pg. 921-926.

  • (2015)

DOI: 10.1016/j.apsusc.2015.08.182

In this study, we used Self-Assembled Monolayer (SAM) with CH3 end-group molecules to protect copper surfaces from oxidation and investigated at nanometer scale the integrity and temperature stability of the protective film. The films were characterized by dynamic Chemical Force Microscopy (dCFM), Torsional Resonance Tunneling Atomic Force Microscopy (TR-TUNA) and Attenuated Total Reflection Fourier Transform Infrared Spectroscopy (ATR-FTIR). We observed that temperature stress degraded local properties of our SAM films significantly, when compared to unstressed films. After temperature stress at 100 °C, tunneling current increased and hydrophobicity decreased substantially. In combination with the ATR-FTIR results we assigned local high current spots and local hydrophobic variations to cuprous oxide (Cu2O). After temperature stress at 150 °C, the measurements indicate a decomposition of the SAM film and a further oxidation of the copper surface. In addition, the results show that dynamic dCFM and TR-TUNA are appropriate tools to characterize SAM films structurally, chemically and electrically. Most important, in contrast to conventional contact mode Atomic Force Microscopy techniques, we did not observe any damage to the SAM film by dCFM and TR-TUNA measurements.
  • Elektrotechnik und Medientechnik
  • IQMA
  • NACHHALTIG
Zeitschriftenartikel

  • Tobias Berthold
  • Günther Benstetter
  • Werner Frammelsberger
  • R. Rodríguez
  • M. Nafría

Nanoscale characterization of copper oxide films by Kelvin Probe Force Microscopy

In: Thin Solid Films vol. 584 pg. 310-315.

  • (2015)

DOI: 10.1016/j.tsf.2015.01.071

In this work Peakforce Kelvin Probe Force Microscopy (PF-KPFM) at ambient environment is used to characterize both oxidation states of copper (Cu) surfaces, cupric oxide CuO and cuprous oxide Cu2O, with high lateral resolution. Characteristic values of the contact potential difference were obtained for the copper oxide states. By this means, PF-KPFM measurements enabled to distinguish between the different types of Cu oxide with nanometer resolution and to correlate the oxidation states to local topography features. It was even possible to identify single oxide grains on top of the Cu surface. As a result, PF-KPFM is able to address the needs for nanoscale characterization methods in semiconductor manufacturing or other related technologies where the local oxidation behavior of copper is a critical issue.
  • IQMA
  • Elektrotechnik und Medientechnik
  • NACHHALTIG
Vortrag

  • Tobias Berthold
  • Günther Benstetter
  • Werner Frammelsberger
  • R. Rodríguez
  • M. Nafría

Characterization of Self-Assembled Monolayers on Copper by Scanning Probe Microscopy

In: 16th International Conference on Thin Films (ICTF16)

Dubrovnik, Kroatien

  • 13.-16.10.2014 (2014)
  • IQMA
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
Vortrag

  • Tobias Berthold
  • Günther Benstetter
  • Werner Frammelsberger
  • R. Rodríguez
  • M. Nafría

Nanoscale copper oxide characterization with Kelvin Probe Force Microscopy . Posterpräsentation

In: The 7th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2014)

Chongquing, China

  • 15.-18.07.2014 (2014)
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA
Beitrag in Sammelwerk/Tagungsband

  • Günther Benstetter
  • Werner Frammelsberger

Raster-Sonden-Mikroskopie . Analyseverfahren für die Halbleiterelektronik

In: Elektrotechnik und Elektronik in Bayern. Sonderteil Sensorik (Zukunftstechnologien in Bayern) pg. 10-16.

München

  • (2013)
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • IQMA
Vortrag

  • Werner Frammelsberger

Atomic Force Microscopy - Characteristics and Advanced Applications

In: 2nd International Autumn School of Surface Engineering

University of West Bohemia Pilsen, Tschechische Republik

  • 14.10.2013 (2013)
  • Maschinenbau und Mechatronik
Vortrag

  • Tobias Berthold
  • Günther Benstetter
  • Werner Frammelsberger
  • R. Rodríguez
  • M. Nafría
  • Raimund Förg

Analysis of copper oxide films by combined scanning microscopy

In: 6th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2012)

Singapur, Singapur

  • 14.-17.07.2012 (2012)
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA
Vortrag

  • M. Lanza
  • M. Porti
  • M. Nafría
  • Günther Benstetter
  • Werner Frammelsberger
  • Heiko Ranzinger
  • Edgar Lodermeier
  • G. Jaschke

Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM

In: 18th European Symposium on Reliability of Electronic Devices, Failure Physics and Analysis (ESREF)

Arcachon, Frankreich

  • 2007 (2007)
  • Maschinenbau und Mechatronik
  • IQMA
  • Elektrotechnik und Medientechnik
Zeitschriftenartikel

  • M. Lanza
  • M. Porti
  • M. Nafría
  • Günther Benstetter
  • Werner Frammelsberger
  • Heiko Ranzinger
  • Edgar Lodermeier
  • G. Jaschke

Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM

In: Microelectronics Reliability vol. 47 pg. 1424-1428.

  • (2007)

In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current–voltage (I–V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive.
  • Elektrotechnik und Medientechnik
  • IQMA
  • Maschinenbau und Mechatronik
Zeitschriftenartikel

  • Werner Frammelsberger
  • Günther Benstetter
  • J. Kiely
  • R. Stamp

C-AFM-based thickness determination of thin and ultra-thin SiO2 films by use of different conductive-coated probe tips

In: Applied Surface Science vol. 253 pg. 3615-3626.

  • (2007)

The influence of the probe tip type on the electrical oxide thickness result was researched for four differently coated conductive tip types using SiO2 (oxide) films with optical thickness of 1.7–8.3 nm. For this purpose, conductive atomic force microscopy (C-AFM) was used to measure more than 7200 current–voltage (IV) curves. The electrical oxide thickness was determined on a statistical basis from the IV-curves using a recently published tunnelling model for C-AFM application. The model includes parameters associated with the probe tip types used. The evolution of the tip parameters is described in detail. For the theoretical tip parameters, measured and calculated IV-curves showed excellent agreement and the electrical oxide thickness versus the optical oxide thickness showed congruent behaviour, independent of the tip type. However, differences in the electrical oxide thickness were observed for the different tip types. The theoretical parameters were modified experimentally in order to reduce these differences. Theoretical and experimental tip parameters were compared and their effect on the differences in the electrical oxide thickness is discussed for the different tip types. Overall, it is shown that the proposed model provides a comprehensive framework for determining the electrical oxide thickness using C-AFM, for a wide range of oxide thicknesses and for differently coated conductive tips.
  • IQMA
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
Vortrag

  • Günther Benstetter
  • W. Bergbauer
  • T. Lutz
  • Werner Frammelsberger

Kelvin Probe Force Microscopy – An appropriate tool for the electrical characterisation of LED heterostructures

In: Nanotech Northern Europe

Helsinki, Finnland

  • 16.-18.05.2006 (2006)
  • IQMA
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
Vortrag

  • Günther Benstetter
  • W. Bergbauer
  • T. Lutz
  • Werner Frammelsberger

Kelvin Probe Force Microscopy – An appropriate tool for the electrical characterisation of LED heterostructures

In: 17th European Symposium - Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2006

Wuppertal

  • 03.-06.10.2006 (2006)
  • Maschinenbau und Mechatronik
  • IQMA
  • Elektrotechnik und Medientechnik
Zeitschriftenartikel

  • Werner Frammelsberger
  • Günther Benstetter
  • J. Kiely
  • R. Stamp

Thickness determination of thin and ultra-thin SiO2 films by C-AFM IV-spectroscopy

In: Applied Surface Science vol. 252 pg. 2375-2388.

  • (2006)

Conductive atomic force microscopy was used to determine the electrical oxide thickness for five different silicon dioxide layers with thickness in the order of 1.6–5.04 nm. The electrical thickness results were compared with values determined by ellipsometry. A semi-analytical tunnelling current model with one single parameter set was used to superpose current/voltage curves in both the direct tunnelling and the Fowler–Nordheim tunnelling regime regions. The overall electrical oxide thickness was determined by statistical means from results of nearly 3000 IV-curves recorded for different conductive CoCr-coated tips. Good agreement between the shape of model and experimental data was achieved, widely independent of the oxide thickness. Compared with the ellipsometry value, the electrical thickness was larger by a value of 0.36 nm (22%) for the thinnest oxide and smaller by a value of 0.31 nm (6%) for the thickest oxide, while intermediate values yielded differences better than 0.15 nm (<<6%). The physical differences between the measurement techniques were shown to contribute to this observation. In addition, statistical deviations between single and multiple measurements using a single tip and using a number of different tips were analysed. The causes, for example, natural oxide thickness variations, tip wear, air humidity induced effects and contaminations, are evaluated and discussed. The method proposed was able to determine the electrical oxide thickness with a standard deviation in the order of ±±6–9%. The results suggest that for optimal results it is necessary to perform several repetitions of IV-measurements for one sample and, in addition, to employ more than one tip.
  • Maschinenbau und Mechatronik
  • IQMA
  • Elektrotechnik und Medientechnik
Zeitschriftenartikel

  • W. Bergbauer
  • T. Lutz
  • Werner Frammelsberger
  • Günther Benstetter

Kelvin Probe Force Microscopy – An appropriate tool for the electrical characterisation of LED heterostructures

In: Microelectronics Reliability vol. 46 pg. 1736-1740.

  • (2006)

Light Emitting Diodes (LEDs) are commercially important devices in opto-semiconductor industry. The light emitting properties of LEDs degrade with time of operation and may lead to device failure. Even though the stability and reliability of LEDs are important topics, they are not well researched with AFM to date. This work demonstrates that Kelvin Probe Force Microscopy (KPFM) is an appropriate method to identify specific sites of increased degradation in a semiconductor heterostructure. Furthermore, the study shows that KPFM provides the metrological basis for further investigations with respect to the progress of degradation and its physical background. In this study, KPFM has been used to measure the potential gradient over cross-sectioned LED heterostructure in operation at different states of degradation. The results show significant differences between new and aged LEDs, markedly at specific layers of the LED heterostructure.
  • Elektrotechnik und Medientechnik
  • IQMA
  • Maschinenbau und Mechatronik
Vortrag

  • Günther Benstetter
  • Werner Frammelsberger
  • Edgar Lodermeier
  • Heiko Ranzinger
  • D. Liu
  • Peter Breitschopf
  • W. Bergbauer
  • Alexander Hofer

Raster-Sonden-Mikroskopie (SPM) in der Fehler- und Zuverlässigkeitsanalytik

In: VDE Fehlermechanismen bei kleinen Geometrien

Grainau

  • 2006 (2006)
  • IQMA
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
Vortrag

  • Günther Benstetter
  • Peter Breitschopf
  • B. Knoll
  • Werner Frammelsberger

Intermittent contact scanning capacitance microscopy – An improved method for 2D doping profiling

In: Nanotech Northern Europe

Helsinki, Finnland

  • 16.-18.05.2006 (2006)
  • IQMA
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
Zeitschriftenartikel

  • D. Liu
  • Günther Benstetter
  • Werner Frammelsberger

Nanoscale electron field emissions from the bare, hydrogenated and graphite-like layer covered tetrahedral amorphous carbon films

In: Journal of Applied Physics vol. 99 pg. 044303-044303-8.

  • (2006)

DOI: 10.1063/1.2171806

We have compared nanoscale electron field emissions from the bare, hydrogenated, and graphitelike-layer-covered tetrahedral amorphous carbon (ta-C) films. The electron field emission is investigated using a combination of atomic force microscopy (AFM)-based nanowear tests and conducting AFM, by simultaneously measuring the topography and the conductivity of the samples. The analysis of Fowler-Nordheim tunneling currents indicates the formation of filamentlike emission channels within ta-C films. The low-field emission from carbon films is primarily due to a field enhancement arising from conducting nanostructures inside the films. The implications of surface structures for electron field emission are discussed. Electrons are easily delocalized within sp2-bonded rings/chains at a film surface, which leads to an increase in the nanotip emission area. At identical emission currents of 60–80 pA, hydrogenated films are much more easily destroyed due to a relatively insulating surface structure. The results suggest that a very high emission site density, required for field-emission display applications, may be produced by locally modifying a film surface layer.
  • Maschinenbau und Mechatronik
  • IQMA
  • Elektrotechnik und Medientechnik
Vortrag

  • Günther Benstetter
  • D. Liu
  • Werner Frammelsberger

Advanced Atomic Force Microscopy Techniques for Nano-Scale Analysis

In: 1st Conference of Micro- and Nanotechnology

Wien, Österreich

  • 2005 (2005)
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • IQMA
Vortrag

  • Peter Breitschopf
  • Günther Benstetter
  • B. Knoll
  • Werner Frammelsberger

Intermittent contact scanning capacitance microscopy-A novel method for 2D doping profiling

In: 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

Arcachon, Frankreich

  • 2005 (2005)
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • IQMA
Vortrag

  • Günther Benstetter
  • Peter Breitschopf
  • B. Knoll
  • Edgar Lodermeier
  • Alexander Hofer
  • Werner Frammelsberger

Intermittent Contact Scanning Capacitance Microscopy-First Results

In: Workshop on Scanning Probe Microscopy and Related Techniques

Infineon Technologies Villach, Österreich

  • 10.11.2005 (2005)
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA
Zeitschriftenartikel

  • Peter Breitschopf
  • Günther Benstetter
  • B. Knoll
  • Werner Frammelsberger

Intermittent contact scanning capacitance microscopy-A novel method for 2D doping profiling

In: Microelectronics Reliability vol. 45 pg. 1568-1571.

  • (2005)
In the present study an improved method for 2D doping profiling of semiconductor device structures is presented. The method combines the capabilities of scanning capacitance microscopy (SCM) with the advantages of intermittent contact atomic force microscopy (IC-AFM) and is called intermittent contact scanning capacitance microscopy (IC-SCM). Compared with standard SCM, IC-SCM provides mechanically stable measurement conditions because tip wear is nearly eliminated. Furthermore, background signals without local information are suppressed by demodulating the SCM signal at higher harmonics of the tapping tip frequency. Both, reduced tip wear and higher harmonics demodulation yield improved spatial image resolution at less tip degradation compared with standard SCM.
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA
Vortrag

  • Günther Benstetter
  • Werner Frammelsberger
  • D. Liu
  • Peter Breitschopf

Failure analysis of deep sub-micron semiconductor structures and thin films with atomic force microscopy methods

In: First International conference on Engineering Failure Analysis (ICEFA)

Lissabon, Portugal

  • 2004 (2004)
  • Elektrotechnik und Medientechnik
  • IQMA
  • Maschinenbau und Mechatronik
Beitrag in Sammelwerk/Tagungsband

  • Günther Benstetter
  • Werner Frammelsberger

Raster Sondenmikroskopie in der Mikro- und Nanoelektronik

pg. 12-16.

  • (2004)
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • IQMA
Beitrag in Sammelwerk/Tagungsband

  • Günther Benstetter
  • Werner Frammelsberger

Raster Sondenmikroskopie in der Mikro- und Nanoelektronik

pg. 12-16.

Bayerisches Staatsministerium für Wirtschaft, Infrastruktur, Verkehr und Technologie

  • 2004 (2004)
  • IQMA
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
Vortrag

  • Günther Benstetter
  • Peter Breitschopf
  • Werner Frammelsberger
  • Heiko Ranzinger
  • P. Reislhuber
  • T. Schweinböck

AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis

In: 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

Zürich, Schweiz

  • 2004 (2004)
  • Maschinenbau und Mechatronik
  • IQMA
  • Elektrotechnik und Medientechnik
Vortrag

  • T. Schweinböck
  • S. Schömann
  • D. Alvarez
  • M. Buzzu
  • Günther Benstetter
  • Werner Frammelsberger
  • Peter Breitschopf

New Trends in the application of scanning probe techniques in failure analysis

In: 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

Zürich, Schweiz

  • 2004 (2004)
  • IQMA
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
Zeitschriftenartikel

  • Werner Frammelsberger
  • Günther Benstetter
  • R. Stamp
  • J. Kiely
  • T. Schweinböck

Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for Conductive Atomic Force Microscopy investigations

In: Materials Science & Engineering B vol. 116 pg. 168-174.

  • (2004)

DOI: 10.1016/j.mseb.2004.09.027

As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving force for MOS device degradation the determination and characterisation of electrically week spots is of paramount importance for device reliability and failure analysis. Conductive atomic force microscopy (C-AFM) is able to address this issue with a spatial resolution smaller than the expected breakdown spot. For the determination of the electrically active oxide thickness in practice an easy to use model with sufficient accuracy and which is largely independent of the oxide thickness is required. In this work a simplified method is presented that meets these demands. The electrically active oxide thickness is determined by matching of C-AFM voltage–current curves and a tunnelling current model, which is based on an analytical tunnelling current approximation. The model holds for both the Fowler–Nordheim tunnelling and the direct tunnelling regime with one single tunnelling parameter set. The results show good agreement with macroscopic measurements for gate voltages larger than approximately 0.5–1 V, and with microscopic C-AFM measurements. For this reason arbitrary oxides in the DT and the FNT regime may be analysed with high lateral resolution by C-AFM, without the need of a preselection of the tunnelling regime to be addressed.
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • IQMA
Zeitschriftenartikel

  • T. Schweinböck
  • S. Schömann
  • D. Alvarez
  • M. Buzzu
  • Günther Benstetter
  • Werner Frammelsberger
  • Peter Breitschopf

New Trends in the application of scanning probe techniques in failure analysis

In: Microelectronics Reliability vol. 44 pg. 1541-1546.

  • (2004)

DOI: 10.1016/j.microrel.2004.07.037

  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • IQMA
Zeitschriftenartikel

  • Günther Benstetter
  • Peter Breitschopf
  • Werner Frammelsberger
  • Heiko Ranzinger
  • P. Reislhuber
  • T. Schweinböck

AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis

In: Microelectronics Reliability vol. 44 pg. 1615-1619.

  • (2004)

DOI: 10.1016/j.microrel.2004.07.079

  • IQMA
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
Vortrag

  • Werner Frammelsberger
  • Günther Benstetter

Failure Analysis of Deep Sub-Micron Semiconductor Structures, Presentation held at: Dalian University of Technology

Chinese Academy of Science, Institute of Microelectronics Peking, China

  • 24.11.2003 (2003)
  • Maschinenbau und Mechatronik
  • IQMA
  • Elektrotechnik und Medientechnik
Vortrag

  • Werner Frammelsberger
  • Günther Benstetter
  • et al.

Atomic Force Microscopy Studies of Thin and Ultra-Thin SiO2 Films and Interfaces

Dalian University of Technology, Key-Labs Dalian, China

  • 19.11.2003 (2003)
  • Maschinenbau und Mechatronik
  • IQMA
  • Elektrotechnik und Medientechnik
Vortrag

  • Werner Frammelsberger
  • Günther Benstetter

Atomic Force Microscopy Studies of Thin and Ultra-Thin SiO2 Films and Interfaces

Chinese Academy of Science, Institute of Microelectronics Peking, China

  • 24.11.2003 (2003)
  • IQMA
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
Vortrag

  • Werner Frammelsberger
  • Günther Benstetter

Failure Analysis of Deep Sub-Micron Semiconductor Structures

Chinese Academy of Science, Institute of Microelectronics Peking, China

  • 24.11.2003 (2003)
  • Maschinenbau und Mechatronik
  • IQMA
  • Elektrotechnik und Medientechnik
Vortrag

  • Werner Frammelsberger
  • Günther Benstetter
  • R. Stamp
  • J. Kiely

Characterization of thin and ultrathin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy

In: 14th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

Arcachon, Frankreich

  • 06.-10.10.2003 (2003)
  • Maschinenbau und Mechatronik
  • IQMA
  • Elektrotechnik und Medientechnik
Zeitschriftenartikel

  • Werner Frammelsberger
  • Günther Benstetter
  • T. Schweinböck
  • R. Stamp
  • J. Kiely

Characterization of thin and ultrathin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy

In: Microelectronics Reliability vol. 43 pg. 1465-1470.

  • (2003)

DOI: 10.1016/S0026-2714(03)00260-9

  • IQMA
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
Vortrag

  • Werner Frammelsberger
  • Günther Benstetter
  • T. Schweinböck
  • R. Stamp
  • J. Kiely
  • Peter Breitschopf

Atomic Force Microscopy Studies of Thin and Ultra-thin SiO2 Films . Final Report

In: 2nd VDE World Microtechnologies Congress

München

  • 2003 (2003)
  • Elektrotechnik und Medientechnik
  • IQMA
  • Maschinenbau und Mechatronik
Vortrag

  • Werner Frammelsberger
  • Günther Benstetter
  • T. Schweinböck
  • R. Stamp
  • J. Kiely

Advanced Analysis of Thin and Ultrathin SiO2/Si Interfaces with Combined Atomic Force Microscopy Methods

In: 29th International Symposium for Testing and Failure Analysis pg. 406-412.

Santa Clara, CA, USA

  • November 2003 (2003)
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA
Beitrag in Sammelwerk/Tagungsband

  • Werner Frammelsberger
  • Günther Benstetter
  • T. Schweinböck
  • R. Stamp
  • J. Kiely

Advanced Analysis of Thin and Ultrathin SiO2/Si Interfaces with Combined Atomic Force Microscopy Methods

In: 29th International Symposium for Testing and Failure Analysis pg. 406-412.

Santa Clara, CA, USA

  • (2003)
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • IQMA
Vortrag

  • Günther Benstetter
  • Werner Frammelsberger
  • et al.

UV unterstützter thermischer Oxidationsofen . Präsentation, Kategorie Patente

Würzburg

  • 2003 (2003)
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA
Vortrag

  • Werner Frammelsberger
  • Günther Benstetter

Reliability Analysis of Integrated Circuits in Deep Sub-Micron Technology

Chinese Academy of Science, Institute of Microelectronics Peking, China

  • 24.11.2003 (2003)
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA
Zeitschriftenartikel

  • D. Liu
  • Günther Benstetter
  • Werner Frammelsberger

The effect of the surface layer of tetrahedral amorphous carbon films on their tribological and electron emission properties investigated by atomic force microscopy

In: Applied Physics Letters vol. 82 pg. 3898-3900.

  • (2003)

DOI: 10.1063/1.1581367

The nanowear resistance, tribological, and field emissionproperties of tetrahedral amorphous carbon (ta-C) films have been analyzed by atomic force microscope (AFM)-based wear testing technique, lateral force microscope, and conducting AFM. The ta-C films grown by filtered pulsed cathodic arc discharge were found to have soft surface layers, thick, which contribute to an improvement of their field emissionproperties. The low friction coefficient between the nanotip and film surface is correlated to one or two graphite-like atomic layers at the ta-C film surfaces. The analysis of Fowler–Nordheim tunneling currents indicates the formation of filament-like emission channels in amorphous carbon films.
  • Maschinenbau und Mechatronik
  • IQMA
  • Elektrotechnik und Medientechnik
Vortrag

  • Werner Frammelsberger
  • Günther Benstetter

Verfahren der Rastersondenmikroskopie . Präsentation, Kategorie Patente

Würzburg

  • November 2003 (2003)
  • Maschinenbau und Mechatronik
  • IQMA
  • Elektrotechnik und Medientechnik
Vortrag

  • Günther Benstetter
  • Werner Frammelsberger
  • T. Schweinböck
  • R. Stamp
  • J. Kiely

Conducting Atomic Force Microscopy Studies for Reliability Evaluation of Ultrathin SiO2 Films . Final Report

In: IEEE International Integrated Reliability Workshop

Lake Tahoe, CA, USA

  • 2002 (2002)
  • IQMA
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
Vortrag

  • Werner Frammelsberger
  • Günther Benstetter
  • R. Stamp
  • J. Kiely

Combined AFM Methods to Improve Reliability Investigations of Thin Oxides . Final Report

In: IEEE International Integrated Reliability Workshop

Lake Tahoe, CA, USA

  • 2002 (2002)
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • IQMA

Kernkompetenzen

Mikro- und Nanoanalytik, Oberflächen- und Dünnschichtanalytik, Raster-Sonden-Mikroskopie, Halbleiter Fehler- und Zuverlässigkeitsanalytik, Energiewirtschaft, Elektrische Energieversorgung

Vita

2018-2022: Studiendekan, Fakultät Maschinenbau und Mechatronik seit 2010: Professor an der Technischen Hochschule Deggendorf, Fakultät Maschinenbau und Mechatronik Technischer Asset Manager, E-ON Netz GmbH bzw. transpower stromübertragungs gmbh, Bayreuth Promotion: University of the West of England, Großbritannien Laboringenieur und Doktorand im Projekt Qualitätssicherung und Zuverlässigkeit von Halbleiterbauelementen, Hochschule Deggendorf Bereichsleiter Stromversorgung, Stadtwerke Deggendorf Studienabschluss: Dipl.-Ing. (FH), Fachhochschule Regensburg Berufsausbildung zum Energieanlagenelektroniker, Südzucker AG Plattling

Sonstiges

Professor und Teamleiter im “Institut für Qualitäts- und Materialanalyse” der THD (Leitung: Prof. Dr.-Ing. Günther Benstetter)