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Dr. Günther Ruhl

  • Chemie
  • Materialwissenschaften
  • Analytik

Zentrum für angewandte Forschung

Technologie Campus Teisnach Sensorik I 4.0

Wissenschaftlicher Mitarbeiter

TCTS O 17

09923/80108-506

Sortierung:
Patentschrift

  • T. Spöttl
  • J. Pohl
  • F. Püschner
  • Günther Ruhl

Elektronisches Identifikationsdokument

Deutschland

  • 10.02.2022 (2022)
  • TC Teisnach Sensorik
  • DIGITAL
Vortrag

  • Günther Ruhl
  • F. Czieslok
  • Raimund Förg

Graphene Encapsulated in Glass Membranes. Posterpräsentation

In: GrapheneWeek 2022

München

  • 05.-09.09.2022 (2022)
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • R. Berger
  • Günther Ruhl
  • G. Metzger-Brueckl
  • W. Lehnert
  • R. Rupp

Waferverbund und Verfahren zur Herstellung eines Halbleiterbauteils

Deutschland

  • 01.09.2022 (2022)
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • M. König
  • Günther Ruhl

Fluid sensor, method for providing same, and method for determining a constituent of a fluid

  • 31.08.2021 (2021)
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • R. Rupp
  • Günther Ruhl
  • H.-J. Schulze

Silicon carbide semiconductor device and a method for forming a silicon carbide semiconductor device

  • 02.06.2020 (2020)
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • R. Berger
  • W. Lehnert
  • G. Metzger-Brueckl
  • Günther Ruhl
  • R. Rupp

Wafer composite and method for producing semiconductor components

  • 12.05.2020 (2020)
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • H.-J. Schulze
  • Günther Ruhl
  • R. Rupp

Semiconductor devices and methods for forming semiconductor devices

  • 27.08.2019 (2019)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • H. Theuss
  • G. Beer
  • S. Beer
  • A. Dehe
  • F. Jost
  • S. Kolb
  • Günther Ruhl
  • R. Schaller

Photo-acoustic gas sensor module having light emitter and detector units

  • 26.03.2019 (2019)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • J. Laven
  • P. Irsigler
  • J. Mahler
  • Günther Ruhl
  • H.-J. Schulze
  • M. Zundel

Semiconductor device including a heat sink structure

  • 03.09.2019 (2019)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • M. Hammer
  • Günther Ruhl

Fahrzeugbeleuchtungsanordnung, Leuchtmitteltreiberschaltung und Verfahren zur Bereitstellung von Informationen zur Bestimmung eines Beleuchtungszustandes

  • 02.10.2019 (2019)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • Günther Ruhl
  • M. König

Process for the formation of a graphene membrane component, graphene membrane component, microphone and Hall-effect sensor

  • 24.09.2019 (2019)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Vortrag

  • Günther Ruhl
  • F. Czieslok
  • Raimund Förg

Sensorik mit 2D-Materialien

In: Technologietag Angewandte Sensorik

Coburg

  • 18.09.2019 (2019)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • M. König
  • Günther Ruhl

Elektronische Vorrichtung

  • 28.02.2019 (2019)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Vortrag

  • Alois Kasberger
  • Günther Ruhl
  • Stefan Menzel
  • Raimund Förg

Development of a waterproof, high color fidelity LED Light Panel

In: 6th European Seminar on Precision Optics Manufacturing (POM19)

Teisnach

  • 09.-10.04.2019 (2019)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • DIGITAL
  • NACHHALTIG
Patentschrift

  • T. Spöttl
  • J. Pohl
  • F. Püschner
  • Günther Ruhl

Elektronisches Identifikationsdokument und Verfahren zur Herstellung eines elektronischen Identifikationsdokuments

  • 08.08.2019 (2019)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • DIGITAL
Zeitschriftenartikel

  • M. König
  • Günther Ruhl
  • A. Gahoi
  • S. Wittman
  • T. Preis
  • J.-M. Batke
  • I. Costina
  • M. Lemme

Accurate Graphene-Metal Junction Characterization

In: IEEE Journal of the Electron Devices Society (J-EDS) vol. 7 pg. 219-226.

  • (2019)

DOI: 10.1109/JEDS.2019.2891516

A reliable method is proposed for measuring specific contact resistivity (p C ) for graphenemetal contacts, which is based on a contact end resistance measurement. We investigate the proposed method with simulations and confirm that the sheet resistance under the metal contact (R SK ) plays an important role, as it influences the potential barrier at the graphene-metal junction. Two different complementary metal-oxide-semiconductor-compatible aluminum-based contacts are investigated to demonstrate the importance of the sheet resistance under the metal contact: the difference in R SK arises from the formation of insulating aluminum oxide (Al 2 O 3 ) and aluminum carbide (Al 4 C 3 ) interfacial layers, which depends on the graphene pretreatment and process conditions. Auger electron spectroscopy and X-ray photoelectron spectroscopy support electrical data. The method allows direct measurements of contact parameters with one contact pair and enables small test structures. It is further more reliable than the conventional transfer length method when the sheet resistance of the material under the contact is large. The proposed method is thus ideal for geometrically small contacts where it minimizes measurement errors and it can be applied in particular to study emerging devices and materials.
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
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Beitrag in Sammelwerk/Tagungsband

  • Alois Kasberger
  • Benedikt Winter
  • T. Ullrich
  • Günther Ruhl
  • Raimund Förg

Entwicklung einer wasserdichten LED Flächenleuchte mit direkt im Glas eingebrachtem Konvertermaterial . Poster

  • (2019)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • M. König
  • Günther Ruhl

Schichtstruktur und Verfahren zur Herstellung einer Schichtstruktur

  • 11.07.2019 (2019)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • W. Lehnert
  • R. Berger
  • A. Birner
  • H. Brech
  • O. Haeberlen
  • Günther Ruhl
  • R. Rupp

Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device

  • 01.10.2019 (2019)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • Günther Ruhl
  • G. Lippert
  • H.-J. Schulze
  • T. Zimmer

Method of manufacturing a semiconductor device having graphene material

  • 09.07.2019 (2019)
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • Günther Ruhl
  • T. Hirsch
  • G. Poeppel
  • H. Roedig

Sensor arrangement for particle analysis and a method for particle analysis

  • 19.02.2019 (2019)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • Günther Ruhl
  • K.-O. Subke
  • R. Berger

Verfahren zur Herstellung eines Grabenkondensators

  • 22.02.2018 (2018)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • T. Spoettl
  • F. Pueschner
  • Günther Ruhl
  • Stampka P.

Semiconductor package, smart card and method for producing a semiconductor package

  • 03.04.2018 (2018)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Vortrag

  • Liane Bingel
  • Günther Ruhl
  • Raimund Förg

Glas als Verpackungsmaterial für Lebensmittel . Posterpräsentation

In: 5. Tag der Forschung

Technische Hochschule Deggendorf Deggendorf

  • 08.03.2018 (2018)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • H.-J. Schulze
  • Günther Ruhl
  • H.-J. Timme

Semiconductor device including a phase change material

  • 15.05.2018 (2018)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • K. Elian
  • J. Dangelmaier
  • F. Darrer
  • T. Mueller
  • M. Vaupel
  • M. Fries
  • Günther Ruhl
  • H. Theuss
  • M. Rose
  • S. Auer
  • Wee, T. F. D.
  • S. Chiang

Sensor arrangement, battery cell and energy system

  • 23.10.2018 (2018)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • M. Koenig
  • Günther Ruhl

Method for processing a carrier and method for transferring a graphene layer

  • 05.06.2018 (2018)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • Günther Ruhl
  • M. Koenig

Process for the formation of a graphene membrane component, graphene membrane component, microphone and Hall-effect sensor

  • 11.12.2018 (2018)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • Günther Ruhl
  • T. Hirsch
  • A. Zoepfl

Graphene gas sensor for measuring the concentration of carbon dioxide in gas environments

  • 17.07.2018 (2018)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • Günther Ruhl
  • H.-J. Schulze
  • T. Zimmer
  • W. Lippert

Semiconductor device having a graphene layer, and method manufactoring thereof

  • 20.11.2018 (2018)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Zeitschriftenartikel

  • F. Streb
  • M. Mengel
  • D. Schweitzer
  • C. Kasztelan
  • P. Schoderböck
  • Günther Ruhl
  • T. Lampke

Characterization methods for solid thermal interface materials

In: IEEE Transactions on Components, Packaging and Manufacturing Technology vol. 8 pg. 1024-1031.

  • (2017)

DOI: 10.1109/TCPMT.2017.2748238

Thermal interface materials (TIMs) play a major role in the performance of semiconductor devices by optimizing the thermal contact between device and heatsink. Their influence is further increasing with the usage of novel chip materials such as SiC and GaN. In this methodology study, we compared five of the most established evaluation methods for solid TIMs with each other: transient plane source, LaserFlash, DynTIM, TIMA, and an application-oriented Rth measurement system. We investigated a wide range of typical TIMs in order to explore the limits of the different measurement systems. The results show that, despite existing norms, the used characterization method has a significant influence on the measured thermal conductivity. We also show that the temperature and pressure dependence has a significant influence on the thermal performance of TIMs and that these data need to be included in device specifications. Additionally, detailed error analysis and discussion about sample selection, error influence, and measurement effort for the presented methods are given.
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • H.-J. Schulze
  • P. Irsigler
  • Günther Ruhl

Method of forming a graphene structure

  • 25.07.2017 (2017)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • M. Eckinger
  • A. Dehe
  • S. Kolb
  • Günther Ruhl

Hall effect sensor with graphene detection layer

  • 25.07.2017 (2017)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • R. Berger
  • H. Gruber
  • W. Lehnert
  • Günther Ruhl
  • Raimund Förg
  • A. Mauder
  • H.-J. Schulze
  • M. Sommer
  • C. Rottmair
  • R. Rupp

Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

  • 21.02.2017 (2017)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • K. Elian
  • Günther Ruhl
  • H. Theuss
  • I. Escher-Poeppel

Method for making a sensor device using a graphene layer

  • 03.01.2017 (2017)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • Günther Ruhl
  • K. Pruegl

Method for processing a carrier

  • 18.04.2017 (2017)
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • Günther Ruhl
  • W. Lehnert
  • R. Berger

Two-dimensional material containing electronic components

  • 07.03.2017 (2017)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel

  • Günther Ruhl
  • S. Wittmann
  • M. König
  • D. Neumaier

The integration of graphene into microelectronic devices

In: Beilstein Journal of Nanotechnology vol. 8 pg. 1056-1064.

  • (2017)

DOI: 10.3762/bjnano.8.107

Since 2004 the field of graphene research has attracted increasing interest worldwide. Especially the integration of graphene into microelectronic devices has the potential for numerous applications. Therefore, we summarize the current knowledge on this aspect. Surveys show that considerable progress was made in the field of graphene synthesis. However, the central issue consists of the availability of techniques suitable for production for the deposition of graphene on dielectric substrates. Besides, the encapsulation of graphene for further processing while maintaining its properties poses a challenge. Regarding the graphene/metal contact intensive research was done and recently substantial advancements were made towards contact resistances applicable for electronic devices. Generally speaking the crucial issues for graphene integration are identified today and the corresponding research tasks can be clearly defined.
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Patentschrift

  • K. Elian
  • J. Dangelmaier
  • M. Fies
  • J. Hoegerl
  • G. Meyer-Berg
  • T. Mueller
  • Günther Ruhl
  • H. Theuss
  • M. Vaupel

Apparatus for determining a state of a rechargeable battery or of a battery, a rechargeable battery or a battery, and a method for determining a state of a rechargeable battery or of a battery

  • 29.08.2017 (2017)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • Günther Ruhl
  • F. Bachl

Fluid sensor chip and method for manufacturing the same

  • 14.02.2017 (2017)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • J. Mahler
  • R. Otremba
  • H.-J. Schulze
  • Günther Ruhl
  • H.-J. Timme

Power semiconductor device including a cooling material

  • 17.10.2017 (2017)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • C. Kegler
  • J. Laven
  • H.-J. Schulze
  • Günther Ruhl
  • J. Mahler

Temperature sensor

  • 06.12.2016 (2016)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel

  • M. König
  • Günther Ruhl
  • J.-M. Batke
  • M. Lemme

Self-organized growth of graphene nanomesh with increased gas sensitivity

In: Nanoscale vol. 8 pg. 15490-15496.

  • (2016)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • Günther Ruhl
  • F. Bachl

Fluid sensor chip and method for manufacturing the same

  • 24.05.2016 (2016)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • R. Berger
  • H. Gruber
  • W. Lehnert
  • Günther Ruhl
  • Raimund Förg
  • A. Mauder
  • H.-J. Schulze

Method for manufacturing a composite wafer having a graphite core

  • 02.02.2016 (2016)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • A. Dehe
  • Günther Ruhl

MEMS acoustic transducer, MEMS microphone, MEMS microspeaker, array of speakers and method for manufacturing an acoustic transducer

  • 06.12.2016 (2016)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • Günther Ruhl
  • K. Pruegl

Method for processing a carrier and an electronic component

  • 29.09.2016 (2016)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel

  • F. Streb
  • Günther Ruhl
  • A. Schubert
  • H. Zeidler
  • M. Penzel
  • S. Flemmig
  • I. Todaro
  • R. Squatrito
  • T. Lampke

Simulations and measurements of annealed pyrolytic graphite-metal composite baseplates

In: IOP Conference Series: Materials Science and Engineering vol. 118 pg. 012013.

  • (2016)
We investigated the usability of anisotropic materials as inserts in aluminum-matrix-composite baseplates for typical high performance power semiconductor modules using finite-element simulations and transient plane source measurements. For simulations, several physical modules can be used, which are suitable for different thermal boundary conditions. By comparing different modules and options of heat transfer we found non-isothermal simulations to be closest to reality for temperature distribution at the surface of the heat sink. We optimized the geometry of the graphite inserts for best heat dissipation and based on these results evaluated the thermal resistance of a typical power module using calculation time optimized steady-state simulations. Here we investigated the influence of thermal contact conductance (TCC) between metal matrix and inserts on the heat dissipation. We found improved heat dissipation compared to the plain metal baseplate for a TCC of 200 kW/m2/K and above.To verify the simulations we evaluated cast composite baseplates with two different insert geometries and measured their averaged lateral thermal conductivity using a transient plane source (HotDisk) technique at room temperature. For the composite baseplate we achieved local improvements in heat dissipation compared to the plain metal baseplate.
  • TC Teisnach Sensorik
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Vortrag

  • Günther Ruhl

Challenges in process integration of graphene for manufacturing microelectronic devices . eingeladener Vortrag

In: Graphene Week 2016

Warschau, Polen

  • 13.-17.06.2016 (2016)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • M. Koenig
  • Günther Ruhl

Electronic device

  • 04.10.2016 (2016)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • Günther Ruhl
  • Raimund Förg

Electrical contact for graphene part

  • 10.05.2016 (2016)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • R. Berger
  • H.-J. Schulze
  • A. Mauder
  • W. Lehnert
  • Günther Ruhl
  • R. Rupp

Composite wafer for bonding and encapsulation of a SiC-based functional layer

  • 24.05.2016 (2016)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel

  • G. Lupina
  • J. Kitzmann
  • I. Costina
  • M. Lukosius
  • C. Wenger
  • A. Wolff
  • S. Vaziri
  • M. Östling
  • I. Pasternak
  • A. Krajewska
  • W. Strupinski
  • S. Kataria
  • A. Gahoi
  • M. Lemme
  • Günther Ruhl
  • G. Zoth
  • O. Luxenhofer
  • W. Mehr

Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

In: ACS Nano vol. 9 pg. 4776-4785.

  • (2015)

DOI: 10.1021/acsnano.5b01261

Integration of graphene with Si microelectronics is very appealing by offering a potentially broad range of new functionalities. New materials to be integrated with the Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etching and electrochemical delamination methods with respect to residual submonolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 1013 atoms/cm2. These metal impurities appear to be partially mobile upon thermal treatment, as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics, these results reveal that further progress in synthesis, handling, and cleaning of graphene is required to advance electronic and optoelectronic applications.
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Patentschrift

  • R. Berger
  • H. Gruber
  • W. Lehnert
  • Günther Ruhl
  • Raimund Förg
  • A. Mauder
  • H.-J. Schulze
  • M. Sommer
  • C. Rottmair
  • R. Rupp

Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

  • 29.12.2015 (2015)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • H.-J. Schulze
  • Günther Ruhl
  • H.-J. Timme

Semiconductor device including a phase change material

  • 25.08.2015 (2015)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • K. Elian
  • H. Theuss
  • Günther Ruhl

Sensor module and battery elements

  • 08.12.2015 (2015)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • K. Elian
  • Günther Ruhl
  • H. Theuss
  • I. Escher-Poeppel

Method for making a sensor device using a graphene layer

  • 30.06.2015 (2015)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • M. Vaupel
  • Günther Ruhl

Semiconductor dies having opposite sides with different reflectivity

  • 29.09.2015 (2015)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • K. Elian
  • Günther Ruhl
  • H. Theuss
  • I. Escher-Poeppel

Sensorbauelement und Verfahren

  • 29.10.2015 (2015)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Zeitschriftenartikel

  • S. Vaziri
  • A. Smith
  • M. Östling
  • G. Lupina
  • J. Dabrowski
  • G. Lippert
  • W. Mehr
  • F. Driussi
  • S. Venica
  • V. Di Leece
  • A. Gnudi
  • M. König
  • Günther Ruhl
  • M. Belete
  • M. Lemme

Going ballistic: Graphene hot electron transistors

In: Solid State Communications vol. 224 pg. 64-75.

  • (2015)

DOI: 10.1016/j.ssc.2015.08.012

  • TC Teisnach Sensorik
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  • NACHHALTIG
Patentschrift

  • K. Elian
  • H. Theuss
  • Günther Ruhl

Sensor package and method of manufacturing thereof

  • 01.09.2015 (2015)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patentschrift

  • R. Berger
  • Günther Ruhl
  • W. Lehnert
  • R. Rupp

Compound structure and method for forming a compound structure

  • 22.12.2015 (2015)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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  • NACHHALTIG
Patentschrift

  • M. Hammer
  • Günther Ruhl

Vehicle lighting arrangement

  • 27.05.2014 (2014)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Vortrag

  • Günther Ruhl

Perspectives of Graphene in Semiconductor Industry . eingeladener Vortrag

In: TNT 2014

Barcelona, Spanien

  • 27.-31.10.2014 (2014)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Patentschrift

  • M. Hammer
  • Günther Ruhl
  • A. Strasser
  • M. Melzl
  • R. Goellner
  • D. Groteloh

Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element

  • 11.03.2014 (2014)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • Günther Ruhl
  • M. Hammer
  • R. Kainzbauer

Integriertes Bauelement und Verfahren zur Trennung einer elektrisch leitfähigen Verbindung

  • 02.01.2014 (2014)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • K. Elian
  • Günther Ruhl
  • H. Theuss
  • I. Escher-Poeppel

Method for making a sensor device using a graphene layer

  • 24.06.2014 (2014)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patentschrift

  • R. Berger
  • H. Gruber
  • W. Lehnert
  • Günther Ruhl
  • Raimund Förg
  • A. Mauder
  • H.-J. Schulze
  • M. Sommer
  • C. Rottmair
  • R. Rupp

Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

  • 02.09.2014 (2014)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
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Vortrag

  • Günther Ruhl

Graphene- Balancing the Elephant . Eingeladener Vortrag

In: IHP Institutsseminar

Frankfurt (Oder)

  • 2014 (2014)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Vortrag

  • Günther Ruhl

Graphene - Balancing the Elephant . Eingeladener Vortrag

In: 6. NRW Nano-Konferenz

Dortmund

  • 01.-02.12.2014 (2014)
  • TC Teisnach Sensorik
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  • NACHHALTIG
Zeitschriftenartikel

  • Günther Ruhl
  • W. Lehnert
  • M. Lukosius
  • C. Wenger
  • C. Baristiran Kaynak
  • T. Blomberg
  • S. Haukkac
  • P. Baumann
  • W. Besling
  • A. Roeste
  • B. Riou
  • S. Lhostif
  • A. Halimaou
  • F. Roozeboom
  • E. Langereis
  • W.M.M. Kessels
  • A. Zauner
  • S. Rushworth

Dielectric Material Options for Integrated Capacitors

In: ECS Journal of Solid State Science and Technology vol. 3 pg. N120-N125.

  • (2014)

DOI: 10.1149/2.0101408jss

Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor deposition) process techniques. In this study eight dielectric materials, which can be deposited by these techniques and exhibit the potential to reach k-values of over 50 were identified, prepared and characterized as single films and stacked film systems. To primarily focus on a material comparison, preliminary processes were used for film deposition on planar test devices. Measuring leakage current density versus the dielectric constant k shows that at low voltages (≤1 V) dielectrics with k-values up to 100 satisfy the typical leakage current density specification of <10−7 A/cm2 for MIM capacitors. At higher voltages (3 V) this specification is only fulfilled for dielectrics with k-values below 45. As a consequence, the maximum achievable capacitance gain by introducing high-k dielectrics depends on the operating voltage of the application, such as DRAM capacitors or RF and blocking capacitors. To meet the reliability requirements for RF and blocking capacitors, high-k dielectric film thicknesses of up to 50 nm are necessary.
  • TC Teisnach Sensorik
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Vortrag

  • Günther Ruhl

Perspective of ICT industry on the use of graphene . Eingeladener Vortrag

In: 6th Stuttgart NanoDays Workshop

Stuttgart

  • 2014 (2014)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel

  • A. Zöpfl
  • M.-M. Lemberger
  • M. König
  • Günther Ruhl
  • F.-M. Matysik
  • T. Hirsch

Reduced graphene oxide and graphene composite materials for improved gas sensing at low temperature

In: Faraday Discussions vol. 173 pg. 403-414.

  • (2014)

DOI: 10.1039/c4fd00086b

Reduced graphene oxide (rGO) was investigated as a material for use in chemiresistive gas sensors. The carbon nanomaterial was transferred onto a silicon wafer with interdigital gold electrodes. Spin coating turned out to be the most reliable transfer technique, resulting in consistent rGO layers of reproducible quality. Fast changes in the electrical resistance at a low operating temperature of 85 °C could be detected for the gases NO(2), CH(4) and H(2). Especially upon adsorption of NO(2) the high signal changes allowed a minimum detection of 0.3 ppm (S/N = 3). To overcome the poor selectivity, rGO was chemically functionalized with octadecylamine, or modified by doping with metal nanoparticles such as Pd and Pt, and also metal oxides such as MnO(2), and TiO(2). The different response patterns for six different materials allowed the discrimination of all of the test gases by pattern recognition based on principal component analysis.
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Patentschrift

  • R. Berger
  • H. Gruber
  • W. Lehnert
  • Günther Ruhl
  • Raimund Förg
  • A. Mauder
  • H.-J. Schulze

Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

  • 26.03.2013 (2013)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel

  • M. Lukosius
  • C. Wenger
  • T. Blomberg
  • Günther Ruhl

Properties of stacked SrTiO3/Al2O3 metal–insulator–metal capacitors

In: Journal of Vacuum Science & Technology B vol. 31 pg. 01A102.

  • (2013)

DOI: 10.1116/1.4766183

The possibilities to grow thin films of SrTiO3 and Al2O3 by atomic layer deposition for stacked metal–insulator–metal capacitors have been investigated in this work. In order to tune the functional properties of the capacitors, different processing steps have been employed to realize different combinations of the dielectric stacks. Electrical properties, extracted after the postdeposition annealing and sputter deposition of the Au top electrodes, indicated that the metal–insulator–metal (MIM) structures with additional Al2O3 layer provided better leakage currents densities, compared to the ones with single SrTiO3 based MIM capacitors, but the dielectric constant values have also decreased if additional Al2O3 film was inserted. Attempts to optimize the properties of the MIM stacks have been done by manufacturing heterostructures of Al2O3/SrTiO3/Al2O3 as well as SrTiO3/Al2O3/SrTiO3. In the first case, Al2O3 prevented the crystallization of SrTiO3 in the multilayer dielectric structure and therefore reduced the total capacitance density of the particular MIM stack, whereas the SrTiO3/Al2O3/SrTiO3 stack was found to possess superior electrical properties. Leakage current density as low as ∼10−8 A/cm2 at 2 V and the dielectric constant value of 40 have been extracted.
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Patentschrift

  • Günther Ruhl
  • M. Hammer
  • R. Kainzbauer

System for separation of an electrically conductive connection

  • 26.02.2013 (2013)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel

  • W. Lehnert
  • Günther Ruhl
  • A. Gschwandtner

Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide

In: Journal of Vacuum Science & Technology A vol. 30 pg. 01A152.

  • (2012)

DOI: 10.1116/1.3670876

Among many promising high-k dielectrics, TiO2 is an interesting candidate because of its relatively high k value of over 40 and its easy integration into existing semiconductor manufacturing schemes. The most critical issues of TiO2 are its low electrical stability and its high leakage current density. However, doping TiO2 with Al has shown to yield significant improvement of layer quality on Ru electrodes [S. K. Kim et al., Adv. Mater. 20, 1429 (2008)]. In this work we investigated if atomic layer deposition (ALD) of Al doped TiO2 is feasible in a batch system. Electrical characterizations were done using common electrode materials like TiN, TaN, or W. Additionally, the effect of plasma enhanced processing in this reactor was studied. For this investigation a production batch ALD furnace has been retrofitted with a plasma source which can be used for post deposition anneals with oxygen radicals as well as for directly plasma enhanced ALD. After evaluation of several Ti precursors a deposition process for AlTiOx with excellent film thickness and composition uniformity was developed. The effects of post deposition anneals, Al2O3 interlayers between electrode and TiO2, Al doping concentration, plasma enhanced deposition and electrode material type on leakage current density are shown. An optimized AlTiOx deposition process on TaN electrodes yields to leakage current density of 5 × 10−7 A/cm2 at 2 V and k values of about 35. Thus, it could be demonstrated that a plasma enhanced batch ALD process for Al doped TiO2 is feasible with acceptable leakage current density on a standard electrode material.
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Patentschrift

  • M. Engelhardt
  • H.-J. Timme
  • I. Nikitin
  • M. Frank
  • T. Kunstmann
  • W. Robl
  • Günther Ruhl

Method of processing a semiconductor wafer or die, and particle deposition device

  • 25.12.2012 (2012)
  • TC Teisnach Sensorik
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  • NACHHALTIG
Vortrag

  • Günther Ruhl
  • M. Lukosius

Material Options for Integrated MIM Capacitors . Eingeladener Vortrag

In: WoDiM 2012

Dresden

  • 2012 (2012)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
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Zeitschriftenartikel

  • M. Lukosius
  • C. Wenger
  • T. Blomberg
  • A. Abrutis
  • G. Lupina
  • P. Baumann
  • Günther Ruhl

Electrical and Morphological Properties of ALD and AVD Grown Perovskite-Type Dielectrics and Their Stacks for Metal-Insulator-Metal Applications

In: ECS Journal of Solid State Science and Technology vol. 1 pg. N1-N5.

  • (2012)
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Zeitschriftenartikel

  • M. Lukosius
  • T. Blomberg
  • D. Walcyk
  • Günther Ruhl
  • C. Wenger

Metal-Insulator-Metal capacitors with ALD grown SrTiO3: Influence of Pt electrodes

In: IOP Conference Series: Materials Science and Engineering vol. 41 pg. 012015.

  • (2012)
Metal-Insulator-metal (MIM) capacitors with atomic layer deposited (ALD) single SrTiO3 dielectric have been investigated in this work. Structural and electrical properties were studied after the formation of the MIM stack consisting of the platinum (Pt) bottom electrode, 50 nm SrTiO3 layer and the top Pt electrode. The as deposited films were amorphous and had a dielectric constant of ~ 10, whereas the annealing of the samples in the nitrogen (N2) or oxygen (O2) atmosphere at 550-600 °C led to the crystallization of the SrTiO3 and therefore to the increased dielectric constant of ~ 85. In addition, the electrical results revealed that the combination of SrTiO3 with the high work function electrode like Pt, provided better leakage current performance in comparison with TiN/ SrTiO3 stacks. The values as low as ~ 10−7 A/cm2 at 2 V were observed for both in N2 or O2 annealed SrTiO3 layers. On the other hand, the samples annealed in O2 atmosphere at 600 °C possessed lower capacitance-voltage nonlinearity coefficients (−645 ppm/V2) than the ones for N2 annealed samples (-2700 ppm/V2).
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Zeitschriftenartikel

  • M. Lukosius
  • C. Baristiran Kaynak
  • S. Kubotsch
  • T. Blomberg
  • Günther Ruhl
  • C. Wenger

Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal–Insulator–Metal capacitors

In: Thin Solid Films vol. 520 pg. 4576-4579.

  • (2012)

DOI: 10.1016/j.tsf.2011.10.199

Atomic Vapor Deposition and Atomic Layer Deposition techniques were applied for the depositions of Ta2O5, Ti–Ta–O, Sr–Ta–O and Nb–Ta–O oxide films for Metal–Insulator–Metal (MIM) capacitors used in back-end of line for Radio Frequency applications. Structural and electrical properties were studied. Films, deposited on the TiN bottom electrodes, in the temperature range of 225–400 °C, were amorphous, whereas the post deposition annealing at 600 °C resulted in the crystallization of Nb–Ta–O films. Electrical properties of MIM structures, investigated after sputtering Au top electrodes, revealed that the main characteristics were different for each oxide. On one hand, Ti–Ta–O based MIM capacitors possessed the highest dielectric constant (50), but the leakages currents were also the highest (~ 10− 5 A/cm2 at − 2 V). On the other hand, Sr–Ta–O showed the lowest leakage current densities (~ 10− 9 A/cm2 at − 2 V) as well as the smallest capacitance–voltage nonlinearity coefficients (40 ppm/V2), but the dielectric constant was the smallest (20). The highest nonlinearity coefficients (290 ppm/V2) were observed for Nb–Ta–O based MIM capacitors, although relatively high dielectric constant (40) and low leakage currents (~ 10− 7 A/cm2 at − 2 V) were measured. Temperature dependent leakage-voltage measurements revealed that only Sr–Ta–O showed no dependence of leakage current as a function of the measurement temperature.
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Zeitschriftenartikel

  • T. Blomberg
  • C. Wenger
  • C. Baristiran Kaynak
  • Günther Ruhl
  • P. Baumann

ALD grown NbTaOx based MIM capacitors

In: Microelectronic Engineering vol. 88 pg. 2447-2451.

  • (2011)
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Vortrag

  • Günther Ruhl

From Graphite to Graphene . Eingeladener Vortrag

In: Infineon R&D Colloquium

München

  • 2011 (2011)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel

  • M. Lukosius
  • C. Baristiran Kaynak
  • C. Wenger
  • Günther Ruhl
  • S. Rushworth

Electrical characteristics of Ti-Ta-O based MIM capacitors

In: Journal of Vacuum Science & Technology B vol. 29 pg. 01AC01.

  • (2011)

DOI: 10.1116/1.3534020

Amorphous Ti–Ta–O thin films were deposited by the atomic-vapor deposition technique for metal-insulator-metal (MIM) applications. Depositions were carried out at 400 °C on 200-mm Si (100) wafers using TiN and TaN as bottom electrode materials. The comparison of electrical properties of MIM capacitors was done after physical-vapor deposited growth of different top electrodes, namely, Au, TiN, TaN, and Ti. Capacitance-voltage measurements revealed that the dielectric constant of 50 can be reached if Ti–Ta–O layers are deposited on TiN and if Au, TaN, or Ti is used as the top electrode. The k value is reduced to 37 if TaN is used as bottom electrode. However, if TiN is used as the top electrode, the k value of the stack is reduced by a factor of 3, from 50 to 17, independent of whether TiN or TaN are used as bottom electrodes. The lowest leakage current values (∼10−8 A/cm2) were observed when gold was used as the top electrode, whereas it increased by 3 orders of magnitude if the top electrode was changed to TiN and even more if the top electrode was changed to TaN or Ti.
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Zeitschriftenartikel

  • C. Baristiran Kaynak
  • M. Lukosius
  • I. Costina
  • B. Tillack
  • C. Wenger
  • Günther Ruhl
  • T. Blomberg

Enhanced leakage current behavior of Sr2Ta2O7-x/SrTiO3 bilayer dielectrics for metal-insulator-metal capacitors

In: Thin Solid Films vol. 519 pg. 5734-5739.

  • (2011)

DOI: 10.1016/j.tsf.2011.01.001

Metal–Insulator–Metal (MIM) capacitors are one of the most essential components of radio frequency devices and analog/mixed-signal integrated circuits. In order to obtain high capacitance densities in MIM devices, high-k materials have been considered to be promising candidates to replace the traditional insulators. The challenging point is that the dielectric material must demonstrate high capacitance density values with low leakage current densities. In this work, SrTiO3 based MIM capacitors have been investigated and the electrical performance of the devices have been optimized by using bilayered systems of Sr2Ta2O7−x/SrTiO3 with different thicknesses of Sr2Ta2O7−x. Sputtering X-Ray photoelectron spectroscopy (XPS) measurements have been applied to investigate the interfaces between the thin film constituents of the MIM stacks. The optimized bilayered system provides a leakage current density of 8∗10− 8 A/cm2 at 2 V (bottom electrode injection) and a high capacitance density of 13 fF/μm2.
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Zeitschriftenartikel

  • C. Wenger
  • M. Lukosius
  • T. Blomberg
  • A. Abrutis
  • P. Baumann
  • Günther Ruhl

ALD and AVD Grown Perovskite-type Dielectrics for Metal-Insulator-Metal Application . (Invited)

In: ECS Transactions (The Electrochemical Society) vol. 41 pg. 53-61.

  • (2011)

DOI: 10.1149/1.3633654

Atomic Vapor Deposition (AVD) and Atomic Layer Deposition (ALD) techniques were successfully applied for the depositions of perovskite type dielectrics, namely, Sr-Ta-O, Ti-Ta-O, Sr-Ti-O, Ba-Hf-O, Nb-Ta-O and Ce-Al-O. Thin films were investigated as alternative dielectrics for Metal-Insulator-Insulator (MIM) capacitors. Structural and electrical properties are investigated after depositing the metal oxides on 200 mm TiN/Si (100) substrates within the temperature range of 225-400 ºC. Electrical properties, investigated after sputtering Au top electrodes, revealed that the main characteristics are different for each dielectric. The highest dielectric constants were achieved for crystalline SrTiO3 (k=95), crystalline CeAlO3 (k = 60) and amorphous Ti-Ta-O (k = 50) films. However, Sr-Ta-O based MIM capacitors showed the lowest leakage current densities as well as the smallest capacitancevoltage linearity coefficients.
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Zeitschriftenartikel

  • C. Baristiran Kaynak
  • M. Lukosius
  • B. Tillack
  • C. Wenger
  • T. Blomberg
  • Günther Ruhl

Single SrTiO3 and Al2O3/SrTiO3/Al2O3 based MIM capacitors: Impact of the bottom electrode material

In: Microelectronic Engineering vol. 88 pg. 1521-1524.

  • (2011)

DOI: 10.1016/j.mee.2011.03.022

Metal–Insulator–Metal (MIM) capacitors with atomic layer deposited (ALD) single SrTiO3 dielectric and Al2O3/SrTiO3/Al2O3 multilayer dielectric have been deposited on TaN and TiN bottom electrodes. The MIM stacks have been analyzed and compared in terms of electrical and structural properties. The results indicate that MIMs with multilayer dielectrics provide better leakage current performance than the ones with single dielectrics while capacitance density is decreased. Additional Al2O3 layers prevented the crystallization of SrTiO3 in the multilayer dielectric stack. The decreased capacitance density in MIMs with multilayer dielectric is attributed to the amorphous structure of SrTiO3 and the series capacitance of top and bottom Al2O3 layers. Furthermore, MIM capacitors with single SrTiO3 dielectric layer on TiN electrodes indicated better capacitance density compared to the one with TaN electrodes. The lower capacitance density of the single SrTiO3 dielectric on TaN electrodes is correlated to the interfacial layer formation between SrTiO3 and TaN electrodes.
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Zeitschriftenartikel

  • M. Lukosius
  • C. Baristiran Kaynak
  • C. Wenger
  • Günther Ruhl
  • S. Rushworth
  • P. Baumann

Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications

In: Thin Solid Films vol. 519 pg. 3831-3834.

  • (2011)

DOI: 10.1016/j.tsf.2011.01.239

Atomic Vapor Deposition technique was applied for the depositions of Ti–Ta–O oxide films for Metal–Insulator–Metal capacitors used in back-end of line for Radio Frequency applications. Composition, crystallinity, thermal stability and electrical properties were studied. Ti–Ta–O films, with the ratio of Ta/Ti ~ 1.5, deposited at 400 °C on TiN electrodes, were amorphous and possessed a dielectric constant of 50 with low voltage linearity coefficients and leakage currents densities as low as 10− 7 A/cm2 at 1 V. The films, deposited on Si wafers, were amorphous up to the annealing temperature of 700 °C and crystallized in orthorhombic Ta2O5 phase at higher temperatures.
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Vortrag

  • Günther Ruhl
  • W. Lehnert
  • C. Wenger

CVD grown ternary high-k oxides for MIM capacitors

In: Novel High-k Applications Workshop

Dresden

  • 2011 (2011)
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
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Zeitschriftenartikel

  • M. Lukosius
  • C. Baristiran Kaynak
  • A. Abrutis
  • M. Skapas
  • V. Kubilius
  • A. Zauner
  • Günther Ruhl
  • C. Wenger

Metal-insulator-metal capacitors with MOCVD grown Ce-Al-O as dielectric

In: Microelectronic Engineering vol. 88 pg. 1529-1532.

  • (2011)

DOI: 10.1016/j.mee.2011.03.044

Ce–Al–O thin films were prepared on 70 nm TiN/Si(1 0 0) substrates by pulsed injection metal organic chemical vapor deposition (PI-MOCVD) for metal–insulator–metal (MIM) applications. Depositions were carried out at 400 °C using two separate Ce and Al precursors. In order to get Ce–Al–O films with different stoichiometry, Al2O3 and CeO2 were mixed with different Ce:Al precursors’ ratios. According to the XRD analysis, the as deposited films were amorphous if more aluminum was injected than cerium, and crystalline – if they are cerium rich. Electrical properties have been investigated in MIM capacitors after e-beam evaporation of Au top electrodes. Oxides possess a dielectric constant of 10–20 in combination with leakage current densities as low as 10−5 A/cm2 at −2 V. The post deposition annealing (PDA) at 600 °C and 850 °C in N2 for 5 min lead to the diffusion of Ti from TiN bottom electrode and formation of the rutile TiO2 phase. Nevertheless, CeAlO3 films were obtained if the ratio of injected Ce:Al was 1:1. The k values increased to 60 in this case, but the leakage current density worsened to 10−3 A/cm2 at −2 V.
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Vortrag

  • Günther Ruhl

MaxCaps – Next Generation Dielectrics for Integrated Capacitors . Eingeladener Vortrag

In: Semicon Europe 2011

Dresden

  • 2011 (2011)
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Patentschrift

  • M. Hammer
  • Günther Ruhl
  • A. Strasser
  • M. Melzl
  • R. Goellner
  • D. Groteloh

Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element

  • 09.12.2010 (2010)
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Zeitschriftenartikel

  • C. Baristiran Kaynak
  • M. Lukosius
  • I. Costina
  • B. Tillack
  • C. Wenger
  • Günther Ruhl
  • S. Rushworth

Investigations of thermal annealing effects on electrical and structural properties of SrTaO based MIM capacitor

In: Microelectronic Engineering vol. 87 pg. 2561-2564.

  • (2010)

DOI: 10.1016/j.mee.2010.07.015

The annealing effects on dielectric and electrode materials in Ti/SrTaO/TaN/TiN/Ti/Si metal–insulator–metal (MIM) capacitors were studied. The electrical and structural properties were investigated after subjecting the samples to annealing temperatures of 500 °C, 700 °C and 900 °C. The electrical results revealed that the dielectric constant (k value) of Sr–Ta–O increased from 18 to 50 with increasing annealing temperature. This improvement in k value can be associated to the crystallization of dielectric layer. However, the leakage current density increased several orders of magnitudes with increase of the annealing temperatures. This observation was attributed to crystallization of dielectric, degradation of TaN electrode and out-diffusion of Si from the substrate.
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Vortrag

  • Günther Ruhl
  • A. Brandl
  • A. Lechner

Analysis of Cu oxide films on Cu by Raman spectroscopy . Eingeladener Vortrag

In: GMM Fachgruppentagung Analytik

Erlangen

  • 04.03.2010 (2010)
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Patentschrift

  • Günther Ruhl
  • M. Hammer
  • R. Kainzbauer

System for separation of an electrically conductive connection

  • 21.09.2010 (2010)
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Zeitschriftenartikel

  • C. Wenger
  • M. Lukosius
  • H.-J. Müssig
  • Günther Ruhl
  • S. Pasko
  • C. Lohe

Influence of the electrode material on HfO2 metal-insulator-metal capacitors

In: Journal of Vacuum Science & Technology B vol. 27 pg. 286-289.

  • (2009)

DOI: 10.1116/1.3071843

TaN and TiN are investigated as bottom electrode materials for metal-insulator-metal (MIM) capacitor applications. Atomic vapor deposited HfO2 films are used as high-k dielectric. The influence of the interfacial layer between HfO2 and the bottom electrode on the electrical performance of MIM capacitors is evaluated. The capacitance density as well as the capacitance voltage linearity of high-k MIM capacitors is affected by the electrode material. There is also an impact by TaN and TiN on leakage current density and breakdown strength of the devices.
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Beitrag in Sammelwerk/Tagungsband

  • Günther Ruhl
  • M. Krenzer
  • J.-M. Batke

Development of a TiN-CVD process with very high step coverage

pg. 33-37.

  • (2009)

DOI: 10.1109/ASMC.2009.5155948

Current high-aspect ratio devices require deposition processes for conducting barrier and electrode films in vias and trenches with increasingly high aspect ratios. In this work we studied the extension of a CVD-TiN process based on the thermal deposition from TDEAT and NH3 in combination with subsequent plasma treatment. We investigated the process parameter space (including deposition temperature, pressure, NH3/TDEAT ratio and total gas flow) applying a DoE with respect to step coverage, deposition rate and electrical resistivity. One challenge is the quantitative determination of step coverage, which we overcame by using mapping Auger Electron Spectroscopy.
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Vortrag

  • Günther Ruhl
  • M. Krenzer
  • J.-M. Batke

Investigation of CVD-TiN layers for high aspect ratios . Eingeladener Vortrag

In: GMM Fachgruppentagung PVD/CVD

Erlangen

  • 2009 (2009)
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Zeitschriftenartikel

  • G. Roeder
  • C. Manke
  • P. Baumann
  • S. Petersen
  • V. Yanev
  • A. Gschwandtner
  • Günther Ruhl
  • P. Petrik
  • M. Schellenberger
  • L. Pfitzner
  • H. Ryssel

Characterization of Ru and RuO2 thin films prepared by pulsed metal organic chemical vapor deposition

In: Current Topics in Solid State Physics vol. 5 pg. 1231-1234.

  • (2008)

DOI: 10.1002/pssc.200777865

Ultra‐thin ruthenium (Ru) layers were fabricated by pulsed metal organic chemical vapor deposition in an Aixtron Tricent reactor using a metal‐organic Ru precursor. Layer deposition was performed on different metal barrier combinations and on Al2O3 dielectric layers used in the fabrication of advanced Metal‐Insulator‐Metal (MIM) capacitor structures and on thermal SiO2 as reference structure. Ru layers with a thickness of 10 nm were characterized by Spectroscopic Ellipsometry (SE) and additional reference methods such as Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), and X‐Ray Reflectometry (XRR). As deposited and in situ annealed Ru layers were characterized by SE applying Drude‐Lorentz‐ and Effective Medium Approximation (EMA) models. It was shown that the deposited layers consist of a Ru‐RuO2 bilayer structure. By in situ annealing, the RuO2 layer thickness is reduced and highly pure Ru films are obtained. On the metal barriers the formation of a metal oxide interface, which is related to the deposition process, was determined.
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Patentschrift

  • F. Erber
  • B. Schönherr
  • T. Lutz
  • C. Ebi
  • Günther Ruhl
  • T. Franke
  • F. Gans

Verfahren zur Kompensation von Streu-/Reflexionseffekten in der Teilchenstrahllithographie

  • 09.03.2006 (2006)
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Patentschrift

  • J. Mathuni
  • Günther Ruhl

Process for the plasma etching of materials not containing silicon

  • 04.07.2006 (2006)
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Patentschrift

  • J. Mathuni
  • Günther Ruhl

Verfahren zur Seitenwandpassivierung beim Plasmaätzen

  • 01.12.2005 (2005)
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Patentschrift

  • C. Ebi
  • F. Erber
  • T. Franke
  • F. Gans
  • T. Lutz
  • Günther Ruhl
  • B. Schönherr

Method for compensating for scatter/reflection effects in particle beam lithography

  • 11.10.2005 (2005)
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Patentschrift

  • J. Mathuni
  • Günther Ruhl

Production method for a halftone phase mask

  • 19.07.2005 (2005)
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Beitrag in Sammelwerk/Tagungsband

  • P. Nesladek
  • Günther Ruhl
  • M. Kristlib

Investigation of Cr chamber conditioning

In: EMC 2004: 20th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components ; lectures held at the GMM-Conference, January 12-14, 2004 in Dresden, Germany. null (GMM-Fachbericht) pg. 151 f..

Berlin

  • (2004)
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Beitrag in Sammelwerk/Tagungsband

  • E. Cotte
  • C. Holfeld
  • U. Dersch
  • Günther Ruhl
  • J. Perlich

Numerical and experimental study of oxide growth on EUV mask capping layers

In: 24th Annual BACUS Symposium on Photomask Technology (14-17 September, 2004, Monterey, California, USA). null (SPIE proceedings series) pg. 751-761.

Bellingham, Wash.

  • (2004)

DOI: 10.1117/12.569276

The interface roughness of EUV mask multilayers was taken into account for the numerical calculation of blank reflectance, and models for the growth of oxide on Si capping layers were proposed and evaluated. The simulations were then checked and validated with reflectometry measurements at different steps of the mask blank processing as well as for various angles of incidence, and ellipsometry data on layer thickness. The benchmarked models made it possible to characterize EUV mask blank Mo/Si multilayers (period, thickness ratio, number of bilayers), as well as Si capping layers and native oxide layers from reflectivity measurements. This enabled the study, via a combination of experiments and simulations, of the growth of SiO2 layers, bringing deeper understanding into this phenomenon. Finally, the simulations were used to more properly optimize multilayers and quantify the influence of the exposure tool illumination numerical aperture. Having successfully matched reflectivity data around the actinic wavelength, it was also possible to extend the models to inspection wavelengths in order to predict inspection contrast values.
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Patentschrift

  • Günther Ruhl
  • G. Prechtl
  • W. Sabisch
  • A. Kersch
  • P. Nesladek
  • F. Gans
  • R. Anderson

Kompensationsrahmen zur Aufnahme eines Substrats

  • 16.09.2004 (2004)
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Zeitschriftenartikel

  • F. Letzkus
  • J. Butschke
  • M. Irmscher
  • F.-M. Kamm
  • C. Koepernik
  • J. Mathuni
  • J. Rau
  • Günther Ruhl

Dry etch processes for the fabrication of EUV masks

In: Microelectronic Engineering vol. 73-74 pg. 282-288.

  • (2004)

DOI: 10.1016/j.mee.2004.02.054

The absorber and buffer etching is a crucial step in the manufacture of EUV masks due to the stringent CD and reflectance requirements. Plasma etching of Cr layers, usually applied as an absorber for conventional masks, induces a resolution-limiting line width reduction. Therefore, new absorber materials for extreme ultraviolet lithography (EUVL) masks have to be evaluated. We investigated the etching behaviour of two different layer materials, TaN-I and TaN-II. Dense lines and contact holes down to 100 nm have been realized and an etch bias ⩽+5 nm per feature has been measured. The CD uniformity of lithography and absorber patterning was about 10 nm total range. In addition, etching processes for two different buffer materials, Cr and SiO2, have been developed. These dry etch processes for buffer and absorber layer etching have been successfully applied for EUV test mask fabrication. First results of reflectance measurements of patterned masks showed only a minimal reflectance loss due to mask making of ⩽1%.
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Beitrag in Sammelwerk/Tagungsband

  • J. Mathuni
  • J. Rau
  • F.-M. Kamm
  • Günther Ruhl
  • C. Holfeld
  • F. Letzkus
  • C. Koepernik
  • J. Butschke

Optimized processes and absorber-stack materials for EUV masks,

In: EMC 2004: 20th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components ; lectures held at the GMM-Conference, January 12-14, 2004 in Dresden, Germany. null (GMM-Fachbericht) pg. 131 f..

Berlin

  • (2004)
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Patentschrift

  • J. Mathuni
  • Günther Ruhl

Verfahren und Vorrichtung zum Entlacken eines Bereiches auf einem Maskensubstrat

  • 26.02.2004 (2004)
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Patentschrift

  • Günther Ruhl
  • N. Falk

Plasma-etching process for molybdenum silicon nitride layers on half-tone phase masks based on gas mixtures containing monofluoromethane and oxygen

  • 28.09.2004 (2004)
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Vortrag

  • Günther Ruhl
  • J. Mathuni
  • D. Knobloch
  • F.-M. Kamm
  • J. Rau
  • F. Letzkus
  • R. Springer

Development of a plasma etch process for TaN absorber patterning on EUV masks

In: Photomask Japan

Yokohama, Japan

  • 2003 (2003)
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Beitrag in Sammelwerk/Tagungsband

  • Günther Ruhl
  • J. Mathuni
  • D. Knobloch
  • F.-M. Kamm
  • J. Rau
  • F. Letzkus
  • R. Springer

Development of a plasma etch process for TaN absorber patterning on EUV masks

In: Proceedings of Photomask and Next-Generation Lithography Mask Technology X (16-18 April 2003, Yokohama, Japan). null (SPIE proceedings series) pg. 1014-1025.

Bellingham, Wash.

  • (2003)

DOI: 10.1117/12.504243

EUV mask technology poses many new challenges on mask manufacturing processes. One crucial manufacturing step is the patterning of the EUV absorber. Although in the first concepts a Chromium film is used as absorber, increasing demands for shrinking feature sizes will run Chromium out of steam. Due to the necessary oxygen content of the chromium etch plasma and the isotropic etch mechanism for chromium an etch bias of several 10 nm occurs. This results in limitations for the minimal feature size, for which reason a new absorber material has to be developed. The most promising candidate is Tantalum Nitride TaN, which in contrast to the isotropic Cr-etch process, gives the possibility of applying a more anisotropic etch utilizing higher ion energies and sidewall passivation. In this work a plasma etch process for TaN masked with positive CAR resist was developed on masks including a SiO2 buffer layer. Before running the experiments for process characterization, an endpoint detection solution by OES for very small open areas was developed utilizing principal components analysis (PCA). Additionally, an experimental matrix was set up varying bias power, source power and pressure. The DoE experiments were analyzed with respect to etch selectivities, etch bias, etch polymer formation, sidewall angle, iso-dense bias and linearity. After characterisation of the experimental results, optimized process conditions are discussed. We show that this process is capable of resolving feature sizes below 100 nm.
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Beitrag in Sammelwerk/Tagungsband

  • R. Anderson
  • Günther Ruhl
  • P. Nesladek
  • G. Prechtl
  • W. Sabisch
  • A. Kersch
  • M. Buie

Improvement of Chrome CDU by Optimizing Focus Ring Design

In: Proceedings of Photomask and Next-Generation Lithography Mask Technology X (16-18 April 2003, Yokohama, Japan). null (SPIE proceedings series) pg. 264-274.

Bellingham, Wash.

  • (2003)
Uniform radical distribution in the etching plasma is essential to meet chrome critical dimension (CD) uniformity for future technology nodes on chrome masks. The Etec Systems Tetra photomask etch chamber utilizes an alumina focus ring in order to optimize the etch uniformity of the chrome mask by minimizing gas flow effects and shaping the radial distribution of the etching radicals over the mask surface. This paper describes a systematic investigation to optimize the current focus ring, in order to improve etch critical dimension uniformity. The focus ring (FR) optimization work was made possible by manufacturing a modular focus ring that allowed the geometry to be varied at different heights and diameters. The circular shape of the modular focus ring, along with the height and diameter combinations, has a large influence on the etch performance at the mask corners and edges. The underlying mechanism was investigated by modeling and simulation. Based on simulation results the focus ring geometry was varied and the optimum FR configuration was found. The critical dimension uniformity could be adjusted on uniformly patterned masks with different pattern loads to meet production specifications.
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Patentschrift

  • J. Mathuni
  • Günther Ruhl

Plasmaätzverfahren für MoSi(O)N-Schichten

  • 10.04.2003 (2003)
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Zeitschriftenartikel

  • Günther Ruhl
  • P. Nesladek
  • A. Boesl

An optimized process for dry stripping photomasks

In: Solid State Technology vol. 46 pg. 103-106.

  • (2003)
Increasingly, new photoresists and novel polymer-rich plasma etch processes used in photomask manufacturing require that conventional wet stripping must be replaced with dry plasma-stripping techniques. But these dry processes bring a whole new set of process concerns. This work optimized a microwave-plasma stripping process for the best photoresist-to-chrome oxide selectivity and photoresist etch rate, while maintaining antireflective coating integrity.
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Patentschrift

  • K. Hieber
  • T. Kruck
  • M. Schober
  • Günther Ruhl

Gasgemisch und Verfahren zum Trockenätzen von Metallen, insbesondere Kupfer, bei niedrigen Temperaturen

  • 02.10.2003 (2003)
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Patentschrift

  • Günther Ruhl
  • N. Falk

Plasmaätzprozess für MoSiN-Schichten auf Halbton-Phasenmasken auf der Basis von Monofluormethan und Sauerstoff enthaltenden Gasgemischen

  • 10.10.2002 (2002)
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Beitrag in Sammelwerk/Tagungsband

  • R. Anderson
  • Günther Ruhl
  • N. Sandlin
  • M. Buie

Study of the role of Cl2, O2, and He in the chrome etch process with optical emission spectroscopy

In: Proceedings of the 22nd Annual BACUS Symposium on Photomask Technology (September 30-October 4, 2002; Monterey, CA, USA). null (SPIE proceedings series) pg. 641-652.

  • (2002)

DOI: 10.1117/12.467849

Demands on critical dimension specifications increase with the continuous shrinking of design rules. In order to meet sub-0.13μm specifications with precise process control, a better understanding of the etching chemistry and surface reactions need to be achieved. Optical emission spectroscopy (OES) is frequently used in the photomask community as a diagnostic for calling endpoint, but is often underutilized in process development. In-situ measurements, like OES, need to be utilized and correlated to post-etch metrology measurements in order to provide a larger picture of the etch process. In this paper, OES is used to characterize and monitor chrome etch processes on the Etec Systems Tetra photomask etch chamber. Changes in process conditions, such as source power, He percentage, pressure, and Cl2:O2 flow ratios have been captured by time-averaged optical emission traces. The OES data of the plasma, along with SEM pictures of line profiles, are used to gain insight in process optimization for the etching of chrome.
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Patentschrift

  • T. Struck
  • Günther Ruhl
  • M. Verbeek

Verfahren und Vorrichtung zur Analyse von Strukturen einer Fotomaske

  • 24.01.2002 (2002)
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Beitrag in Sammelwerk/Tagungsband

  • Y.-C. Huang
  • M. Buie
  • B. Stoehr
  • A. Buxbaum
  • Günther Ruhl

Extended Chamber Matching and Repeatability Study for Chrome Etch

In: 21th Annual BACUS Symposium on Photomask Technology (October 3-5, 2001; Monterey, CA, USA). null (Proceedings of SPIE, the International Society for Optical Engineering) pg. 624-632.

Bellingham (Wash.)

  • (2001)

DOI: 10.1117/12.458344

Shrinking design rules, optical proximity correction and advanced phase shifting techniques require new methods of photomask manufacturing. The Applied Materials Centura photomask etch chamber leverages Applied Materials' extensive etch experience to provide an innovative dry etch solution to the mask dry etch challenges for < 0.13 micrometers device generations. Repeatable, consistent, stable etch performance is critical for advanced mask manufacturing. An extended chamber matching and repeatability study for chrome etch found that stable chrome and photoresist etch rates (and therefore selectivities) are produced on the Applied Materials Centura photomask etch chamber. The etch responses are consistent mask to mask as well as chamber to chamber. Prior to the extended study, pumping efficiencies, RF source and bias calibrations and optical emission spectral responses were compared. Since the study was performed at several different sites, the metrology tools were calibrated using masks specifically designed for this purpose. The marathon testing illustrates the stable etch performance over time.
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Beitrag in Sammelwerk/Tagungsband

  • M. Buie
  • B. Stoehr
  • A. Buxbaum
  • Günther Ruhl

An Endpoint Solution for Photomask Chrome Loads Down to 0.25%

In: 21th Annual BACUS Symposium on Photomask Technology (October 3-5, 2001; Monterey, CA, USA). null (Proceedings of SPIE, the International Society for Optical Engineering) pg. 616-623.

Bellingham (Wash.)

  • (2001)

DOI: 10.1117/12.458342

Endpoint measurement sensitivity requirements in photomask can make or break an etch. The exposed chrome on today's photomask can vary between 0.25 percent and approximately 50 percent. Although excessive overetch does not deleteriously impact the underlying quartz, accurate endpoint detection is essential for preserving the critical dimension (CD) and CD uniformity across the mask. In order to provide a strong endpoint solution for photomask etch, a systematic investigation of etches with varying chrome loads was conducted. Passive monitoring of the optical emission spectra does not impact or interfere with the etch process. Also this method does not need specified endpoint sites on the mask as interferometric methods and provides an integrated endpoint signal over the whole mask area independent of the chrome clearing pattern. Two strong candidate wavelengths for calling endpoint in chrome etch were identified. However, optical emission spectroscopy endpoint detection has two drawbacks, which have historically limited its applicability. Firstly, the exposed area may be too low and/or secondly, the etch rate may be too slow for detection. Both of these concerns have been addressed in this paper by varying the exposed area on the photomasks from 0.25 percent to 99 percent. Endpoint was easily detected even for the slowest possible etch rate and for low exposed area.
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Beitrag in Sammelwerk/Tagungsband

  • F. Erber
  • Günther Ruhl
  • R. Dietrich
  • J. Mathuni
  • P. Nesladek

Development and characterization of a new plasma etching process for mask manufacturing

In: Proceedings of Photomask and Next Generation Lithography Mask Technology VIII (September 2001; Kanagawa, Japan). null (Proceedings of SPIE, the International Society for Optical Engineering) pg. 401-408.

  • (2001)

DOI: 10.1117/12.438358

CD uniformity and CD mean to target specifications nowadays can only be accomplished by mask manufacturing process using chrome dry etch. Chrome plasma etch processes tend to show a strong dependency of the chrome etch rate and thus the etch bias on the clearfield percentage of a mask resulting in varying offtarget behavior. There are various possibilities to compensate for this loading effect. In previous work the methods of using exposure dose and development time for offtarget control were investigated. In this study we examined the capability of plasma etch parameters to be used for offtarget control. The effects of oxygen concentration, pressure and overetch percentage on etch bias and CD uniformity were experiment. Two different development processes were investigated. The resulting offtarget control model was then confirmed by running additional masks at three different clearfield percentages. Measurement results showed a high confidence level for the model predicted numbers. SEM images confirmed stable behavior of chromium sidewall angles.
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Zeitschriftenartikel

  • Günther Ruhl
  • R. Dietrich
  • R. Ludwig
  • N. Falk
  • T. Morrison
  • B. Stoehr

Optimizing the Chromium Dry Etch Process

In: Semiconductor International vol. 24 pg. 239-246.

  • (2001)
A dry etch process for etching chromium-on-glass masks was developed and optimized. During optimization for minimum etch bias, a new type of metrology tool was used to measure critical dimensions and characterize the sidewall profiles of both the photoresist and the final mask structures.
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Beitrag in Sammelwerk/Tagungsband

  • Günther Ruhl
  • R. Dietrich
  • R. Ludwig
  • N. Falk
  • T. Morrison
  • B. Stoehr

Chrome dry etch characterization using Surface Nano Profiling

In: Proceedings of the 20th Annual BACUS Symposium on Photomask Technology (September 13-15, 2000; Monterey, CA, USA). null (Proceedings of SPIE, the International Society for Optical Engineering) pg. 97-107.

  • (2001)

DOI: 10.1117/12.410753

In this paper we describe the development of a chrome dry etch process on a new type of mask etch tool. One crucial goal was to minimize the CD etch bias. To meet this goal, a procedure for the direct characterization of CD etch bias was developed. The common methods for measuring the CD etch bias as resist-to-chrome CD difference, such as confocal optical microscope or SEM measurement, only give correct results, if the sidewalls are identical to the calibration standard. This is normally not the case as, due to the differing step height of resist and chrome, and the fact that during process development, in particular, the sidewall shapes and angles can vary significantly. Thus, it is very important to use a CD measurement method which takes the sidewall shapes (slope, foot) into account. One novel method is the use of a Scanning Nano Profiler (SNP) which was derived from the AFM principle. In contrast to AFM the use of a special high aspect ratio tip with 90° sidewall angle, in combination with pixelwise scanning of the substrate surface, provides information about the true sidewall shape and CD.
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Beitrag in Sammelwerk/Tagungsband

  • Günther Ruhl
  • P. Nesladek
  • A. Boesl

Microwave plasma resist stripping for mask manufacturing

In: Proceedings of Photomask and Next-Generation Lithography Mask Technology IX (23-25 April, 2002, Yokohama, Japan). null (SPIE proceedings series) pg. 282-290.

Bellingham, Wash.

  • (2001)

DOI: 10.1117/12.476956

Usually in photomask manufacturing, photoresists are stripped by wet processes using amineous solvents or acids. However, new photoresists and novel polymer-rich plasma etch processes in photomask manufacturing require new resist and polymer stripping techniques. The use of plasma strip processes strongly improves the stripping capability. One simple and economic solution is the microwave type reactor using oxygen plasma. As the chromium oxide antireflective coating (ARC) layer is etched in pure oxygen microwave plasma, the stripping plasma chemistry has to be modified to maintain sufficiently high selectivity towards chromium oxide. In this work a stripping process was optimized with respect to photoresist-to-chrome oxide selectivity and photoresist etch rate. The effect of the strip process on CD performance of the mask and integrity of the chromium oxide antireflective coating were investigated. Finally an endpoint detection solution was developed to optimize throughput. The described plasma stripping process proved to be fully applicable to photomask manufacturing.
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Vortrag

  • Günther Ruhl
  • J. Mathuni

Dry Etching of Photomasks Utilizing DPS Technology . eingetragener Vortrag

In: Applied Materials Technical Seminar, Semicon West

San Francisco, CA, USA

  • 2000 (2000)
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Beitrag in Sammelwerk/Tagungsband

  • C. Friedrich
  • L. Mader
  • A. Erdmann
  • S. List
  • R. Gordon
  • C. Kalus
  • U. Griesinger
  • R. Pforr
  • J. Mathuni
  • Günther Ruhl
  • W. Maurer

Optimising edge topograpy of alternating phase shift masks using rigorous mask modelling

In: Optical Microlithography XIII (1-3 March 2000, Santa Clara, USA). null (Proceedings of SPIE) pg. 1323.

Bellingham, Washington

  • (2000)
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Beitrag in Sammelwerk/Tagungsband

  • Günther Ruhl
  • J. Hochmuth
  • T. Coleman

Control Methodology of off-target for varying pattern densities with chrome dry etch

In: Symposium on Photomask Technology. 15-17 September, 1999, Monterey, California (Proceedings of SPIE, the International Society for Optical Engineering) pg. 297.

Bellingham, Washington, USA

  • (1999)

DOI: 10.1117/12.373324

Critical dimension (CD) control and resolution requirements of advanced photomasks require a new class of fabrication processes. These include the use of higher contrast resists and low etch bias processes such as plasma etching for patterning chrome films. Previous work has shown that ZEP 7000 resist and ICP dry etching of chrome provide the process latitude needed to meet 180 nm mask requirements and beyond. However, due to the loading effects, the deviation of the CD from the target value is a function of the chrome loading on the plate when using dry etching. Therefore, CD control must occur by varying the exposure dose or the develop time based on the pattern loading of a particular mask level. By understanding the relationships between the change in CD with respect to dose, develop time and pattern loading, models can be created which accurately predict the required parameters to tightly control CD performance independent of dry etch loading effects. In this paper a production process is described which utilizes ZEP 7000 and ICP dry etching. A series of experiments have been run to characterize the change in CD based on both dose and develop time. Then a matrix of experiments were run to determine the effect of pattern loading on CD. A predictive model was generated from the DOE data which accurately predicts the dose and develop time needed to meet the CD targeting requirements for any given mask level regardless of pattern density. The model was then verified on production mask levels of randomly varying pattern density.
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Vortrag

  • Günther Ruhl
  • J. Hochmuth
  • T. Coleman

Control Methodology of off-target for varying pattern densities with chrome dry etch

In: 19th Annual Symposium on Photomask Technology

Monterey, CA, USA

  • 15.-17.11.1999 (1999)
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Zeitschriftenartikel

  • H. Treichel
  • Günther Ruhl
  • P. Ansmann
  • R. Würl
  • C. Müller
  • M. Dietlmeier

Low dielectric constant materials for interlayer dielectric . (Invited Paper)

In: Microelectronic Engineering vol. 40 pg. 1-19.

  • (1998)

DOI: 10.1016/S0167-9317(97)00185-8

The more advanced an integrated circuit becomes, the more stringent are the demands for certain properties of a dielectric or insulating material. In addition, it is essential that the layer maintain its specific electrical, physical and chemical properties after incorporation in the device structure and during subsequent processing. Due to temperature budget constraints and the accelerated decrease of feature sizes below 0.25 μm one can no longer rely on traditional choices but has to search for alternatives, both for low and high permittivity replacements. In the article we survey currently used low dielectric constant materials and future trends for micro-electronic applications.
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Beitrag in Sammelwerk/Tagungsband

  • M. Engelhardt
  • Günther Ruhl
  • et al.

Vertically integrated circuits: A key technology for future high performance systems

pg. 187.

  • (1997)
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Patentschrift

  • Günther Ruhl
  • V. Schröcke

Verfahren und Vorrichtung zur Erfassung von atomarem Wasserstoff in einem Mikroelektronik-Fertigungsreaktor

  • 06.02.1997 (1997)
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Beitrag in Sammelwerk/Tagungsband

  • H. Treichel
  • Günther Ruhl
  • R. Würl
  • P. Ansmann
  • C. Müller
  • M. Dietlmeier

Dielectric Materials and Insulators for Microelectronics

In: Chemical vapor deposition. Proceedings of the fourteenth international conference and EUROCVD-11 ; [held as part of the 192nd Electrochemical Society Meeting in Paris, France, September 5-9, 1997] (Proceedings volume / Electrochemical Society) pg. 1125.

Pennington, NJ

  • (1997)
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Beitrag in Sammelwerk/Tagungsband

  • H. Treichel
  • S. Seitz
  • K. Neumeier
  • Günther Ruhl
  • C. Müller

High-Temperature Resistent Devices for Energy-Efficient Automotive Applications

  • (1997)
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Beitrag in Sammelwerk/Tagungsband

  • D. Bollmann
  • Günther Ruhl
  • et al.

Three dimensional metallization for vertically integrated circuits

pg. 94.

  • (1997)
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Zeitschriftenartikel

  • P. Ramm
  • Günther Ruhl
  • et al.

Three dimensional metallization for vertically integrated circuits . (Invited Lecture)

In: Microelectronic Engineering (Materials for Advanced Metallization MAM '97; 16-19 March 1997; Villard de Lans, France) vol. 37-38 pg. 39-47.

  • (1997)

DOI: 10.1016/S0167-9317(97)00092-0

  • TC Teisnach Sensorik
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Beitrag in Sammelwerk/Tagungsband

  • G. Röska
  • K. Hieber
  • Günther Ruhl
  • H. Treichel

Future Challenges in Multilevel Interconnection and Wiring

  • (1996)
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Zeitschriftenartikel

  • Günther Ruhl
  • R. Rehmet
  • M. Knoživá
  • R. Merica
  • S. Vepřek

In situ XPS studies of the deposition of TiNxCy films from tetrakis(dimethyamido)titanium(IV) and bis[N,N'-bis(tert.-butyl)- ethylenediamido]titanium(IV)

In: Chemistry of Materials vol. 8 pg. 2712-2720.

  • (1996)
  • TC Teisnach Sensorik
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Beitrag in Sammelwerk/Tagungsband

  • G. Röska
  • K. Hieber
  • Günther Ruhl
  • H. Treichel

Metallisierung höchstintegrierter und komplexer Systeme . (Eingeladener Beitrag)

pg. 1163.

  • (1996)
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Vortrag

  • Günther Ruhl
  • B. Fröschle
  • P. Ramm
  • A. Intemann
  • W. Pamler

Deposition of titaniumnitride/tungsten films for application in vertically integrated circuits technology

In: Materials for Advanced Metallization '95

Dresden

  • 1995 (1995)
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Beitrag in Sammelwerk/Tagungsband

  • A. Intemann
  • Günther Ruhl
  • E. Hartmann
  • H. Körner

Applications and properties of MOCVD-TiN

pg. 209.

  • (1995)
  • TC Teisnach Sensorik
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Zeitschriftenartikel

  • Günther Ruhl
  • B. Fröschle
  • P. Ramm
  • A. Intemann
  • W. Pamler

Deposition of titaniumnitride/tungsten films for application in vertically integrated circuits technology

In: Applied Surface Science vol. 91 pg. 382-387.

  • (1995)
  • TC Teisnach Sensorik
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Zeitschriftenartikel

  • M. Engelhardt
  • W. Pamler
  • B. Fröschle
  • T. Graßl
  • Günther Ruhl

Interchip Vias

In: European Semiconductor pg. 17 ff..

  • (1995)
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Beitrag in Sammelwerk/Tagungsband

  • M. Engelhardt
  • W. Pamler
  • B. Fröschle
  • T. Graßl
  • Günther Ruhl

Vertical integration of chips: a technological challenge for plasma etching and deposition

  • (1995)
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Zeitschriftenartikel

  • M. Rückschloß
  • T. Wirschem
  • H. Tamura
  • Günther Ruhl
  • J. Oswald
  • S. Vepřek

Photoluminescence from OH-related radiative centres in silica, metal oxides, oxidized nanocrystalline and porous silicon

In: Journal of Luminescence vol. 63 pg. 279-287.

  • (1995)

DOI: 10.1016/0022-2313(94)00076-O

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Beitrag in Sammelwerk/Tagungsband

  • A. Intemann
  • Günther Ruhl

Remote Plasma Deposition of CVD Titanium Nitride Films using Organometallic Precursors

  • (1995)
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Beitrag in Sammelwerk/Tagungsband

  • M. Engelhardt
  • W. Pamler
  • T. Graßl
  • Günther Ruhl

A Wafer-to-Wafer Interconnect Scheme Using Through-Hole Silicon Trench Etching and MCVD

  • (1995)
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Beitrag in Sammelwerk/Tagungsband

  • A. Intemann
  • H. Koerner
  • Günther Ruhl
  • K. Hieber
  • E. Hartmann

Applications and Properties of MOCVD Titanium Nitride

  • (1994)
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Vortrag

  • Günther Ruhl
  • K. Hieber

Trends in der Prozeßentwicklung für die Mehrlagenmetallisierung . Eingeladener Vortrag

In: Arbeitskreis Plasmaoberflächentechnologie

Sindelfingen

  • 1994 (1994)
  • TC Teisnach Sensorik
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Beitrag in Sammelwerk/Tagungsband

  • Günther Ruhl
  • R. Rehmet
  • M. Knoživá
  • S. Vepřek

In situ XPS studies of the deposition of thin films from tetrakis(dimethylamido)titanium organometallic precursor for diffusion barriers

pg. 461.

  • (1993)

DOI: 10.1557/PROC-309-461

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Hochschulschrift

  • Günther Ruhl

XPS-Studien oberflächenchemischer Prozesse beim Plasmaätzen von (Mn,Zn)Ferriten und der MOCVD von TiNxCy

Technische Universität München München

  • 1993 (1993)
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Vortrag

  • Günther Ruhl
  • S. Vepřek
  • M.G.J.. Vepřek-Heijman

Plasmaätzen von Mangan-Zink-Ferriten

In: 4. Bundesdeutsche Fachtagung Plasmatechnologie

Garching

  • 1990 (1990)
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Vortrag

  • Günther Ruhl

XPS als Methode zur Charakterisierung von Graphen

In: GMM-Nutzergruppentreffen 1.2.6 "Prozesskontrolle, Inspektion & Analytik"

Dresden

  • 13.10.2022
  • TC Teisnach Sensorik
  • NACHHALTIG